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Investigation of the structure of an amorphous As-Se semiconductor system by relaxation methods

  • Amorphous, Vitreous, and Organic Semiconductors
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Abstract

The results of a complex investigation into dark-current relaxation in the long-time region of an MIM structure based on an As-Se thin-film chalcogenide system are presented. The values of parameters describing the electronic processes ocurring in the contact layers of the investigated compounds are estimated. The coincidence of the nature of conductivity and charge-accumulation mechanisms is revealed. The relaxation-time distribution function is calculated, and its structural sensitivity to such technological factors as the change in the composition stoichiometry and the method for manufacturing experimental samples is established.

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Authors and Affiliations

  1. Hertzen Russian State Pedagogical University, St. Petersburg, 191186, Russia

    R. A. Castro, V. A. Bordovsky, G. I. Grabko & T. V. Taturevich

Authors
  1. R. A. Castro
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  2. V. A. Bordovsky
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  3. G. I. Grabko
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  4. T. V. Taturevich
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Corresponding author

Correspondence to R. A. Castro.

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Original Russian Text © R.A. Castro, V.A. Bordovsky, G.I. Grabko, T.V. Taturevich, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1646–1651.

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Castro, R.A., Bordovsky, V.A., Grabko, G.I. et al. Investigation of the structure of an amorphous As-Se semiconductor system by relaxation methods. Semiconductors 45, 1583–1588 (2011). https://doi.org/10.1134/S1063782611120074

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  • DOI: https://doi.org/10.1134/S1063782611120074

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