Abstract
A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.
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Original Russian Text © A.K. Shestakov, K.S. Zhuravlev, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1652–1661.
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Shestakov, A.K., Zhuravlev, K.S. The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier. Semiconductors 45, 1589–1599 (2011). https://doi.org/10.1134/S1063782611120128
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DOI: https://doi.org/10.1134/S1063782611120128