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Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

It is shown that, by using a gyratron, it is possible to control the position of a p-n junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of impurities in the field of thermoelastic stresses appearing in the course of sample cooling after gyrotronic irradiation.

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References

  1. E. L. Savin and B. I. Boltaks, Sov. Phys. Semicond. 5, 1173 (1971).

    Google Scholar 

  2. B. I. Boltaks, S. M. Gorodetskii, T. D. Dzhafarov, G. S. Kulikov, and R. Sh. Malkovich, Sov. Phys. Solid State 13, 2877 (1971).

    Google Scholar 

  3. A. V. Dvurechenskii, G. A. Kachurin, E. V. Nidaev, and L. S. Smirnov, Pulsed Laser Annealing of Semiconductor Materials (Moscow, Nauka, 1982) [in Russian].

    Google Scholar 

  4. G. A. Sukach, Semiconductors 27, 487 (1993).

    ADS  Google Scholar 

  5. G. A. Sukach, Semiconductors 31, 649 (1997).

    Article  ADS  Google Scholar 

  6. I. B. Puzin, Prib. Tekh. Eksp., No. 4, 155 (1983).

  7. Yu. R. Nosov, Physical Principles of the Semiconductor Diode Operating in the Pulse Mode (Nauka, Moscow, 1968) [in Russian].

    Google Scholar 

  8. G. A. Sukach, N. I. Sypko, A. B. Bogoslovskaya, A. E. Gaft, E. A. Glushkov, V. D. Lisovenko, A. A. Litvin, and V. A. Shevchenko, OPT, No. 26, 64 (1993).

  9. G. A. Sukach, G. S. Svechnikov, and N. I. Sypko, OPT, No. 27, 50 (1994).

  10. J. D. Eshebly, Continual Theory of Dislocation (Proc. Roy. Soc. London A 241(1226), 337 (1957); Inostr. Liter., Moscow, 1963).

    Google Scholar 

  11. V. P. Voronkov and G. A. Gurchenok, Sov. Phys. Semicond. 24, 1141 (1990).

    Google Scholar 

  12. L. N. Larikov, V. M. Fal’chenko, V. F. Mazanko, S. M. Gurevich, G. K. Kharchenko, and A. I. Ignatenko, Sov. Phys. Dokl. 21, 194 (1976).

    Google Scholar 

  13. A. V. Rzhanov, N. N. Gerasimenko, S. V. Vasil’ev, and V. I. Obodnikov, Sov. Tech. Phys. Lett. 7, 521 (1981).

    Google Scholar 

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Authors and Affiliations

  1. National University of Life and Environment Sciences of Ukraine, 03041, Kiev, Ukraine

    G. A. Sukach

  2. Berdyansk State Pedagogical University, 71100, Berdyansk, Ukraine

    V. V. Kidalov

Authors
  1. G. A. Sukach
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  2. V. V. Kidalov
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Correspondence to V. V. Kidalov.

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Original Russian Text © G.A. Sukach, V.V. Kidalov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1633–1636.

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Sukach, G.A., Kidalov, V.V. Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation. Semiconductors 45, 1571–1574 (2011). https://doi.org/10.1134/S106378261112013X

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  • DOI: https://doi.org/10.1134/S106378261112013X

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