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Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals

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Abstract

The effect of resonant acoustic wave excitation in semi-insulating gallium-arsenide single crystals is investigated by means of light pulses. The peak amplitude of excited elastic oscillations is observed in a temperature range, where small values of the internal friction and electrical conductivity of the semiconductor take place simultaneously. The effect is related to the inverse piezoelectric conversion of the bulk-photovoltage energy into the mechanical deformation of the semiconductor crystal. The results of the investigations can be used for designing semiconductor photodetectors with high modulation-frequency selectivity.

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Authors and Affiliations

  1. State Technical University, Voronezh, 394026, Russia

    V. I. Mitrokhin, S. I. Rembeza & R. N. Antonov

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  1. V. I. Mitrokhin
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  2. S. I. Rembeza
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  3. R. N. Antonov
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Correspondence to V. I. Mitrokhin.

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Original Russian Text © V.I. Mitrokhin, S.I. Rembeza, R.N. Antonov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1611–1616.

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Mitrokhin, V.I., Rembeza, S.I. & Antonov, R.N. Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals. Semiconductors 45, 1550–1554 (2011). https://doi.org/10.1134/S1063782611120098

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  • DOI: https://doi.org/10.1134/S1063782611120098

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