Abstract
It is established that charge carrier (hole) transport in the Al-Se95As5〈EuF3〉-Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects C −1 are related to broken selenium bonds. Deep traps corresponding to charged intrinsic defects P −2 are formed by arsenic atoms with broken coordination. It is shown that the EuF3 impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.
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Original Russian Text © A.I. Isayev, S.I. Mekhtiyeva, S.N. Qaribova, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1599–1603.
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Isayev, A.I., Mekhtiyeva, S.I. & Qaribova, S.N. Space-charge-limited currents in an Se95As5 chalcogenide glass-like semiconductor system containing EuF3 impurities. Semiconductors 45, 1538–1542 (2011). https://doi.org/10.1134/S1063782611120050
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DOI: https://doi.org/10.1134/S1063782611120050