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Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition

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Abstract

The results of a comprehensive study of the conditions for growing a-SiO x :H 〈Er,O〉 films are presented. The effect of the composition of various erbium-containing targets (a-SiO x :H <Er,O>, ErO x , Er2SiO5, Er2O3, and Er), substrate temperature, and annealing temperatures in argon, air, and under conditions of SiH4 + Ar + O2 plasma glow is studied. In order to obtain a-SiO x :H 〈Er,O〉 films with the highest photoluminescence intensity of erbium ions, it is recommended for the following technological conditions to be used: the substrate holder should be insulated from dc-magnetron electrodes and the working gas mixture should include silane, argon, and oxygen. Single-crystal silicon and metal erbium should be used as targets. The erbium target should be placed only in the Si-target erosion zone.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St.Petersburg, 194021, Russia

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev & I. N. Trapeznikova

  2. Konstantinov Saint Petersburg Institute of Nuclear Physics, Russian Academy of Sciences, ul. Orlova Roshcha 1, Leningrad Oblast, Gatchina, 188300, Russia

    V. M. Lebedev

Authors
  1. Yu. K. Undalov
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  2. E. I. Terukov
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  3. O. B. Gusev
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  4. V. M. Lebedev
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  5. I. N. Trapeznikova
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Correspondence to Yu. K. Undalov.

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Original Russian Text © Yu.K. Undalov, E.I. Terukov, O.B. Gusev, V.M. Lebedev, I.N. Trapeznikova, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1667–1677.

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Undalov, Y.K., Terukov, E.I., Gusev, O.B. et al. Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition. Semiconductors 45, 1604–1616 (2011). https://doi.org/10.1134/S1063782611120141

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  • DOI: https://doi.org/10.1134/S1063782611120141

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