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Effect of pressure on the electronic spectrum of indium arsenide

  • Electronic Properties of Semiconductors
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Abstract

Based on the dependences of the Hall coefficient and the resistivity of n- and p-InAs and p-InAs〈Mn〉 bulk crystals on hydrostatic pressures up to 9 GPa at 77 and 300 K, the evolution of the energy spectrum of electrons upon isotropic contraction of a crystal lattice is studied. Intervals between the energy levels of shallow, deep, and deep resonance impurity centers and between the edges of intrinsic bands, and the pressure coefficients for these intervals, were determined.

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Authors and Affiliations

  1. Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, 367003, Russia

    I. K. Kamilov, S. F. Gabibov, M. I. Daunov & A. Yu. Mollaev

Authors
  1. I. K. Kamilov
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  2. S. F. Gabibov
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  3. M. I. Daunov
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  4. A. Yu. Mollaev
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Corresponding author

Correspondence to A. Yu. Mollaev.

Additional information

Original Russian Text © I.K. Kamilov, S.F. Gabibov, M.I. Daunov, A.Yu. Mollaev, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 12, pp. 1604–1610.

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Kamilov, I.K., Gabibov, S.F., Daunov, M.I. et al. Effect of pressure on the electronic spectrum of indium arsenide. Semiconductors 45, 1543–1549 (2011). https://doi.org/10.1134/S1063782611120062

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  • DOI: https://doi.org/10.1134/S1063782611120062

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