Light-emitting diodes based on GaSb alloys for the 1.6–4.4 μm mid-infrared spectral range T. N. DanilovaB. E. ZhurtanovYu. P. Yakovlev Review Pages: 1235 - 1266
Growth kinetics of thin films formed by nucleation during layer formation V. G. DubrovskiiG. E. Cirlin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1267 - 1274
Hydrogen desorption from the surface under the conditions of epitaxial growth of silicon layers from monosilane in vacuum L. K. OrlovT. N. Smyslova Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1275 - 1279
Adsorption, desorption, and contact and thermal transformation of C60 molecules on a Ta(100) surface N. R. Gall’E. V. Rut’kovA. Ya. Tontegode Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1280 - 1284
Applicability of a simplified Shockley-Read-Hall model to semiconductors with various types of defects A. N. Yashin Electronic and Optical Properties of Semiconductors Pages: 1285 - 1289
Sensitivity of insulator-semiconductor structures to time-dependent light fluxes N. F. KovtonyukV. P. MisnikA. V. Sokolov Semiconductor Structures, Interfaces, and Surfaces Pages: 1290 - 1293
Photosensitivity of heterostructures based on finely ground semiconductor phases Yu. A. NikolaevV. Yu. Rud’T. N. Ushakova Semiconductor Structures, Interfaces, and Surfaces Pages: 1294 - 1298
Dynamics of laser-induced phase transitions in cadmium telluride A. A. KovalevS. P. ZhvavyiG. L. Zykov Semiconductor Structures, Interfaces, and Surfaces Pages: 1299 - 1303
Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy D. S. SizovV. S. SizovN. N. Ledentsov Low-Dimensional Systems Pages: 1304 - 1307
Specific features of photoluminescence of InAs/GaAs QD structures at different pumping levels V. A. KulbachinskiiV. A. RogozinA. V. Zdoroveishchev Low-Dimensional Systems Pages: 1308 - 1312
Interband light absorption in size-confined systems in uniform electric fields É. P. SinyavskiiS. M. SokovnichR. A. Khamidullin Low-Dimensional Systems Pages: 1313 - 1318
Photoluminescence of silicon nanocrystals under the effect of an electric field E. N. VandyshevA. M. GilinskiiK. S. Zhuravlev Low-Dimensional Systems Pages: 1319 - 1322
Circular polarization of luminescence caused by the current in quantum wells N. S. AverkievA. Yu. Silov Low-Dimensional Systems Pages: 1323 - 1327
Opal-ZnO nanocomposites: Structure and emission properties G. A. Emel’chenkoA. N. GruzintsevI. I. Zver’kova Amorphous, Vitreous, and Porous Semiconductors Pages: 1328 - 1332
Luminescence and electrical conductivity of polyamide acid and its metal-polymer complexes with La and Tb É. A. LebedevM. Ya. GoikhmanV. Yu. Timoshenko Amorphous, Vitreous, and Porous Semiconductors Pages: 1333 - 1337
Effect of the initial doping level on changes in the free-carrier concentration in porous silicon during ammonia adsorption A. V. PavlikovL. A. OsminkinaP. K. Kashkarov Amorphous, Vitreous, and Porous Semiconductors Pages: 1338 - 1341
Removal of fluoropolimers from the surface of silicon structures by treatment in an atomic hydrogen flow E. V. AnishchenkoV. A. KagadeiS. V. Romanenko Physics of Semiconductor Devices Pages: 1342 - 1345
A new type of high-efficiency bifacial silicon solar cell with external busbars and a current-collecting wire grid G. G. UntilaT. N. KostO. I. Solodukha Physics of Semiconductor Devices Pages: 1346 - 1351
Some aspects of the RHEED behavior of low-temperature GaAs growth Á. Nemcsics Physics of Semiconductor Devices Pages: 1352 - 1355
Enhancement of spontaneous erbium emission near the photonic band edge of distributed Bragg reflectors based on a-Si:H/a-SiOx:H A. V. MedvedevN. A. FeoktistovV. G. Golubev Physics of Semiconductor Devices Pages: 1356 - 1360
