Abstract
A numerical simulation of the dynamics of phase transitions induced by nanosecond pulsed radiation from a ruby laser in CdTe has been carried out. It is shown that evaporation of Cd atoms results in cooling of the surface; consequently, a nonmonotonic profile of the temperature field is formed, with the maximum temperature being attained in the bulk of the semiconductor at a distance of about 10–30 nm from the surface. At radiation energy densities above the threshold, the molten state formed under the surface extends both to the surface and into the depth of the semiconductor. Crystallization also proceeds in two directions, namely, from the surface into the depth of the samples due to the growth of nucleation centers in the melt, which is highly depleted in Cd atoms under the conditions of intense heat removal, and from the substrate to the surface due to epitaxial growth.
Similar content being viewed by others
References
R. Bell, M. Toulemonde, and P. Sifferent, Appl. Phys. 19, 313 (1979).
L. A. Golovan’, V. Yu. Timoshenko, and P. K. Kashkarov, Poverkhnost, No. 10, 65 (1995).
Y. Hatanaka, M. Niraula, Y. Aoki, et al., Appl. Surf. Sci. 142, 227 (1999).
V. A. Gnatyuk, T. Aoki, O. S. Gorodnychenko, and Y. Hatanaka, Appl. Phys. Lett. 83, 3704 (2003).
I. L. Shul’pina, N. K. Zelenina, and O. A. Matveev, Fiz. Tverd. Tela (St. Petersburg) 42, 548 (2000) [Phys. Solid State 42, 561 (2000)].
I. Yu. Viskovatykh, V. M. Lakeenkov, P. K. Kashkarov, et al., Izv. Ross. Akad. Nauk, Ser. Fiz. 57(9), 12 (1993).
L. A. Golovan’, P. K. Kashkarov, V. M. Lakeenkov, et al., Fiz. Tverd. Tela (St. Petersburg) 40, 209 (1998) [Phys. Solid State 40, 187 (1998)].
L. A. Golovan, B. A. Markov, P. K. Kashkarov, and V. Yu. Timoshenko, Solid State Commun. 108, 707 (1998).
S. I. Anisimov, Ya. A. Imas, G. S. Romanov, and Yu. V. Khodyko, The Effect of High-Power Radiation on Metals (Nauka, Moscow, 1970) [in Russian].
S. Dushman, Scientific Foundations of Vacuum Technigue, Ed. by J. M. Lafferty (Wiley, New York, 1962; Mir, Moscow, 1964).
A. A. Samarskii and B. D. Moiseenko, Zh. Vychisl. Mat. Mat. Fiz. 5, 816 (1965).
V. M. Glazov and L. M. Pavlova, Zh. Fiz. Khim. 75, 1735 (2001).
K. R. Zanio, in Semiconductors and Semimetals, Vol. 13: Cadmium Telluride, Ed. by R. K. Willardson and A. C. Beer (Academic, New York, 1978).
S. Adachi and T. Kimura, Jpn. J. Appl. Phys. 32, 3496 (1993).
R. Fang and R. F. Brebrick, J. Phys. Chem. Solids 57, 443 (1996).
A. S. Okhotin, A. S. Pushkarskii, and V. V. Gorbachev, Thermal Properties of Semiconductors (Atomizdat, Moscow, 1972) [in Russian].
A. R. Regel’ and V. M. Glazov, Physical Properties of Electronic Melts (Nauka, Moscow, 1980) [in Russian].
V. V. Godlevsky, M. Jain, J. J. Derby, and J. R. Chelikowsky, Phys. Rev. B 60, 8640 (1999).
V. M. Sklyarchuk, Yu. O. Plevachuk, P. I. Feichuk, and L. P. Shcherbak, Neorg. Mater. 38, 1314 (2002).
G. D. Ivlev, E. I. Gatskevich, S. P. Zhvavyi, et al., in Proceedings of 8th International Conference on Laser and Laser-Information Techologies: Fundamental Problems and Applications (Plovdiv, Bulgaria, 2003), p. 25.
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1345–1349.
Original Russian Text Copyright © 2005 by Kovalev, Zhvavy\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Zykov.
Rights and permissions
About this article
Cite this article
Kovalev, A.A., Zhvavyi, S.P. & Zykov, G.L. Dynamics of laser-induced phase transitions in cadmium telluride. Semiconductors 39, 1299–1303 (2005). https://doi.org/10.1134/1.2128454
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.2128454