Abstract
A new type of heterostructure is suggested and developed. The heterostructures are based on the direct contact of a bulk semiconductor with a dielectric layer in which a finely ground semiconductor phase is dispersed. In Si-and GaAs-based heterostructures of this type, rectification and photovoltaic effects are observed. It is shown that illumination of such structures so that the side of the dielectric layer with the built-in finely ground semiconductor phase is exposed to light induces a broadband photovoltaic effect deep within the fundamental absorption band of the bulk semiconductor.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1340–1344.
Original Russian Text Copyright © 2005 by Nikolaev, V. Rud’, Yu. Rud’, Terukov, Ushakova.
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Nikolaev, Y.A., Rud’, V.Y., Rud’, Y.V. et al. Photosensitivity of heterostructures based on finely ground semiconductor phases. Semiconductors 39, 1294–1298 (2005). https://doi.org/10.1134/1.2128453
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DOI: https://doi.org/10.1134/1.2128453