Abstract
For the first time, the desorption coefficient of hydrogen and activation energy of desorption are directly determined during the growth of an Si epitaxial layer from silane in vacuum using experimental data on the degree of surface coverage of an Si wafer with hydrogen. The results obtained are compared with earlier results obtained under low-temperature conditions, for example, by thermodesorption spectrometry. The found values are used to calculate the crystallization coefficient and its dependence on the growth temperature and decomposition rate for monosilane at the growth surface.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. I. Talanin, I. E. Talanin, and D. I. Levinson, in Proceedings of 4th International Conference on Single Crystal Growth and Heat and Mass Transfer (Obninsk, Russia, 2001), Vol. 1, p. 205.
G. Weirauch, A. Campargue, and H. Burger, J. Mol. Spectrosc. 218, 256 (2003).
M. C. McCarthy and P. Thaddeus, J. Mol. Spectrosc. 222, 248 (2003).
M. Shinohara, T. Kuwano, Y. Kimura, and M. Niwano, Thin Solid Films 435, 13 (2003).
C. M. Greenlief and M. Lier, Appl. Phys. Lett. 64, 601 (1994).
K. J. Kim, M. Suemitsu, M. Yamanaka, and N. Miyamoto, Appl. Phys. Lett. 62, 3461 (1993).
R. W. Price, E. S. Tok, and J. Zhang, J. Cryst. Growth 209, 306 (2000).
M. C. Flowers, N. B. H. Jonathan, Y. Liu, and A. Morris, J. Chem. Phys. 102, 1034 (1995).
D. W. Greve, Mater. Sci. Eng. B 18, 22 (1993).
A. V. Potapov, L. K. Orlov, and S. V. Ivin, Thin Solid Films 336, 191 (1999).
L. K. Orlov, S. V. Ivin, A. V. Potapov, and T. L. Ivina, Zh. Tekh. Fiz. 71(4), 53 (2001) [Tech. Phys. 46, 417 (2001)].
S. M. Gates, C. M. Greenlief, and D. B. Beach, J. Chem. Phys. 93, 7493 (1990).
E. V. Thomsen and C. Christensen, Thin Solid Films 294, 72 (1997).
K. Sakamoto, H. Matsuhata, K. Miki, and T. Sakamoto, J. Cryst. Growth 157, 295 (1995).
S. M. Gates and S. K. Kilkarni, Appl. Phys. Lett. 60, 53 (1992).
U. Höfer, L. Li, and T. F. Heinz, Phys. Rev. B 45, 9485 (1992).
K. Sinniah, M. G. Sherman, L. B. Lewis, et al., Phys. Rev. Lett. 62, 567 (1989); J. Chem. Phys. 92, 5700 (1990).
T. R. Bramblett, Q. Lu, T. Karasawa, et al., J. Appl. Phys. 76, 1884 (1994).
A. Vittadini and A. Selloni, Phys. Rev. Lett. 75, 4756 (1995).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1320–1324.
Original Russian Text Copyright © 2005 by Orlov, Smyslova.
Rights and permissions
About this article
Cite this article
Orlov, L.K., Smyslova, T.N. Hydrogen desorption from the surface under the conditions of epitaxial growth of silicon layers from monosilane in vacuum. Semiconductors 39, 1275–1279 (2005). https://doi.org/10.1134/1.2128449
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.2128449