Abstract
The effect of an electric field on photoluminescence (PL) of silicon nanocrystals formed in silicon dioxide by ion implantation with subsequent annealing has been studied. Application of an electric field leads to an increase in PL intensity by ∼10% at low temperatures and an electric field strength of 12 kV/cm and to its decrease at temperatures above 20 K. The increase in exciton PL intensity in an electric field is inconsistent with the model of recombination of quantum-confined excitons in nanocrystals. The effect can be described in terms of a model of recombination of self-trapped excitons formed at the interface between a Si nanocrystal and SiO2.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1365–1369.
Original Russian Text Copyright © 2005 by Vandyshev, Gilinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Shamirzaev, Zhuravlev.
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Vandyshev, E.N., Gilinskii, A.M., Shamirzaev, T.S. et al. Photoluminescence of silicon nanocrystals under the effect of an electric field. Semiconductors 39, 1319–1322 (2005). https://doi.org/10.1134/1.2128458
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DOI: https://doi.org/10.1134/1.2128458