Abstract
The kinetics of the electronic processes in metal-insulator-semiconductor structures in which the insulator layer has low conductivity is considered. When a dc bias voltage is applied to such a structure, a nonequilibrium depletion region appears in the semiconductor layer. The conditions necessary for the formation of a stable depletion region and the appearance of photoelectric signals in this region are analyzed. The duration of transients and the parameters of the structure layers are estimated.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1336–1339.
Original Russian Text Copyright © 2005 by Kovtonyuk, Misnik, Sokolov.
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Kovtonyuk, N.F., Misnik, V.P. & Sokolov, A.V. Sensitivity of insulator-semiconductor structures to time-dependent light fluxes. Semiconductors 39, 1290–1293 (2005). https://doi.org/10.1134/1.2128452
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DOI: https://doi.org/10.1134/1.2128452