Abstract
Photoluminescence spectra of InAs/GaAs QD structures have been studied at different pumping powers and temperatures. At low pumping levels, one of the spectral lines in an undoped sample is shifted as the power increases. As the temperature increases, the luminescence intensity in the high-energy portion of the spectrum decreases, and the low-energy spectrum is red-shifted. The presence of QDs of two characteristic sizes is demonstrated.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1354–1358.
Original Russian Text Copyright © 2005 by Kulbachinskii, Rogozin, Lunin, Belov, Karuzski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Perestoronin, Zdoroveishchev.
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Kulbachinskii, V.A., Rogozin, V.A., Lunin, R.A. et al. Specific features of photoluminescence of InAs/GaAs QD structures at different pumping levels. Semiconductors 39, 1308–1312 (2005). https://doi.org/10.1134/1.2128456
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DOI: https://doi.org/10.1134/1.2128456