Abstract
A kinetic model of thin-film growth on a solid surface is investigated. This model is valid in the case where the layers are formed as a result of two-dimensional nucleation. Under conditions of high supersaturation of a gaseous phase, solutions are obtained for an island-size distribution function at the initial stage of growth, the degree of filling of a substrate by islands at the coalescence stage, the vertical-growth rate of a film, and its surface roughness. These solutions express the structural characteristics of a growing film in terms of physical constants (the interphase energy on the gas-solid interface and the activation barriers of diffusion and desorption) of the system and the growth parameters (the surface temperature and the material-deposition rate). The obtained results make it possible to calculate the growth dynamics for thin films in particular systems.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1312–1319.
Original Russian Text Copyright © 2005 by Dubrovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Cirlin.
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Dubrovskii, V.G., Cirlin, G.E. Growth kinetics of thin films formed by nucleation during layer formation. Semiconductors 39, 1267–1274 (2005). https://doi.org/10.1134/1.2128448
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DOI: https://doi.org/10.1134/1.2128448