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Some aspects of the RHEED behavior of low-temperature GaAs growth

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Abstract

The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

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Authors and Affiliations

  1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525, Budapest, Hungary

    Á. Nemcsics

  2. Institute of Microelectronics and Technology, Budapest College of Engineering, H-1084, Budapest, Hungary

    Á. Nemcsics

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  1. Á. Nemcsics
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From Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1399–1402.

Original English Text Copyright © 2005 by Nemcsics.

The text was submitted by the author in English.

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Nemcsics, Á. Some aspects of the RHEED behavior of low-temperature GaAs growth. Semiconductors 39, 1352–1355 (2005). https://doi.org/10.1134/1.2128465

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  • DOI: https://doi.org/10.1134/1.2128465

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