Abstract
Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption results in an increase in the number of free electrons in n-type samples up to a level exceeding 1018 cm−3. In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are accounted for by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, specify the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1385–1388.
Original Russian Text Copyright © 2005 by Pavlikov, Osminkina, Belogorokhov, Konstantinova, Efimova, Timoshenko, Kashkarov.
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Pavlikov, A.V., Osminkina, L.A., Belogorokhov, I.A. et al. Effect of the initial doping level on changes in the free-carrier concentration in porous silicon during ammonia adsorption. Semiconductors 39, 1338–1341 (2005). https://doi.org/10.1134/1.2128462
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DOI: https://doi.org/10.1134/1.2128462