1. Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals

   • A. F. Revinskii

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 917 - 920

2. Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon

   • O. V. Aleksandrov
   • A. O. Zakhar’in
   • E. O. Parshin

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 921 - 923

3. Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride

   • S. V. Ordin
   • B. N. Sharupin
   • M. I. Fedorov

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 924 - 932

4. Physical properties of Cu_xAg_1−x In₅S₈ single crystals and related surface-barrier structures

   • I. V. Bodnar’
   • E. A. Kudritskaya
   • Yu. V. Rud’

   Electronic and Optical Properties of Semiconductors Pages: 933 - 936

5. Optical reflection in Pb_0.78Sn_0.22Te doped to 3 at. % with indium

   • A. N. Veis
   • S. A. Nemov

   Electronic and Optical Properties of Semiconductors Pages: 937 - 938

6. Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment

   • V. B. Neimash
   • V. M. Siratskii
   • E. A. Puzenko

   Electronic and Optical Properties of Semiconductors Pages: 939 - 943

7. The effect of antisite defects on the band structure and dielectric function of In_1−x Ga_xSb solid solutions

   • V. G. Deibuk
   • V. I. Studenets

   Electronic and Optical Properties of Semiconductors Pages: 944 - 946

8. Pressure dependence of the dielectric and optical properties of wide-gap semiconductors

   • S. Yu. Davydov
   • S. K. Tikhonov

   Electronic and Optical Properties of Semiconductors Pages: 947 - 949

9. Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy

   • V. G. Mokerov
   • Yu. V. Fedorov
   • N. G. Yaremenko

   Electronic and Optical Properties of Semiconductors Pages: 950 - 952

10. Mobility of charge carriers in double-layer PbTe/PbS structures

    • O. A. Aleksandrova
    • R. Ts. Bondokov
    • Yu. M. Tairov

    Electronic and Optical Properties of Semiconductors Pages: 953 - 956

11. Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures

    • G. M. Min’kov
    • A. V. Germanenko
    • O. É. Rut

    Semiconductor Structures, Interfaces, and Surfaces Pages: 957 - 959

12. Current transport in porous p-Si and Pd-porous Si structures

    • S. V. Slobodchikov
    • Kh. M. Salikhov
    • E. V. Russu

    Semiconductor Structures, Interfaces, and Surfaces Pages: 960 - 962

13. Determining surface recombination rates in epitaxial layers of n-Cd_xHg_1−x Te from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers

    • P. A. Borodovskii
    • A. F. Buldygin
    • V. S. Varavin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 963 - 965

14. Physical model and results of numerical simulation of the degradation of a Si/SiO₂ structure as a result of annealing in vacuum

    • G. V. Gadiyak
    • J. H. Stathis

    Semiconductor Structures, Interfaces, and Surfaces Pages: 966 - 969

15. The effect of a nonmonotonic potential profile on edge magnetic states

    • E. B. Gorokhov
    • D. A. Romanov
    • O. A. Tkachenko

    Low Dimensional Systems Pages: 970 - 974

16. Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma

    • I. A. Karpovich
    • A. V. Anshon
    • D. O. Filatov

    Low Dimensional Systems Pages: 975 - 979

17. Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters

    • S. N. Grinyaev
    • V. A. Chaldyshev

    Low Dimensional Systems Pages: 980 - 984

18. Weak-field magnetoresistance of two-dimensional electrons in In_0.53Ga_0.47As/InP heterostructures in the persistent photoconductivity regime

    • D. D. Bykanov
    • A. M. Kreshchuk
    • I. G. Savel’ev

    Low Dimensional Systems Pages: 985 - 991

19. Energy spectrum of a nonideal quantum well in an electric field

    • O. L. Lazarenkova
    • A. N. Pikhtin

    Low Dimensional Systems Pages: 992 - 996

20. Effect of the quantum-dot surface density in the active region on injection-laser characteristics

    • A. R. Kovsh
    • A. E. Zhukov
    • D. Bimberg

    Low Dimensional Systems Pages: 997 - 1000

21. Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure

    • Yu. L. Ivánov
    • S. A. Morozov
    • A. E. Zhukov

    Low Dimensional Systems Pages: 1001 - 1002

22. Composition and porosity of multicomponent structures: porous silicon as a three-component system

    • L. V. Belyakov
    • T. L. Makarova
    • O. M. Sreseli

    Amorphous, Glassy, and Porous Semiconductors Pages: 1003 - 1005

23. Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities

    • B. I. Reznikov
    • A. V. Subashiev

    Physics of Semiconductor Devices Pages: 1006 - 1014

24. Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors

    • V. V. Vasil’ev
    • Yu. P. Mashukov

    Physics of Semiconductor Devices Pages: 1015 - 1018

25. Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm

    • A. A. Popov
    • V. V. Sherstnev
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 1019 - 1023

26. Photocurrent amplification in Au/SiO₂/n-6H-SiC MOS structures with a tunnel-thin insulator

    • I. V. Grekhov
    • M. I. Veksler
    • A. F. Shulekin

    Physics of Semiconductor Devices Pages: 1024 - 1026

27. Vladimir Idelevich Perel’ (On his 70th birthday)

    Personalia Pages: 1027 - 1028