Abstract
A nonlocal empirical pseudopotential scheme that includes the spin-orbit interaction is used to calculate the electronic structure of In1−x GaxSb solid solutions. A modified virtualcrystal approximation is used to explain the nonlinear experimental dependence of the width of the band gap on composition. The computed band structure is then used to calculate the dispersion of the dielectric constant and compare it with experimental results.
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Fiz. Tekh. Poluprovodn. 32, 1054–1056 (September 1998)
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Deibuk, V.G., Studenets, V.I. The effect of antisite defects on the band structure and dielectric function of In1−x GaxSb solid solutions. Semiconductors 32, 944–946 (1998). https://doi.org/10.1134/1.1187519
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DOI: https://doi.org/10.1134/1.1187519