Abstract
This paper is the continuation of the analysis of a method of determining the cutoff wavelength λ c of infrared photodetectors by irradiating the sample with radiation from two blackbodies with different temperatures. The emitters can operate at lower temperatures as the cutoff wavelength λ c is increased. The parameters of a system employing two blackbodies, which are placed inside a liquid-nitrogen cryostat and have temperatures of 260 and 320 K, respectively, are presented. It is shown that an error of 1 K in determining the lower or higher temperature produces an error of approximately 0.3 and 0.2 µm, respectively, in λ c if λ c=10 µm. Measurements on photodiodes fabricated on the basis of Cd0.24Hg0.76Te (λ c=8.1 µm) epitaxial layers showed that the difference in the values of λ c obtained by this method and from spectral measurements is no more than several tenths of a micron. It is suggested that this method be used as a standard method.
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References
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Fiz. Tekh. Poluprovodn. 32, 1135–1138 (September 1998)
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Vasil’ev, V.V., Mashukov, Y.P. Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors. Semiconductors 32, 1015–1018 (1998). https://doi.org/10.1134/1.1187536
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DOI: https://doi.org/10.1134/1.1187536