Skip to main content
SpringerLink
Log in

Physical properties of CuxAg1−x In5S8 single crystals and related surface-barrier structures

  • Electronic and Optical Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The electrical properties and photoluminescence spectra of single crystals of the ternary compounds CuIn5S8, AgIn5S8 and their solid solutions have been investigated. We have determined the type of conductivity, the mobility, charge carrier concentrations and energies of the radiative transitions in these materials. We have fabricated surface-barrier structures from these single crystals and measured the voltaic photosensitivity.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. L. Chopra and S. R. Das, Thin Film Solar Cells (Plenum Press, New York, 1983).

    Google Scholar 

  2. Yu. V. Rud’ and Z. A. Parimbekov, Zh. Tekh. Fiz. 54, 2253 (1984) [Sov. Phys. Tech. Phys. 29, 1320 (1984)].

    Google Scholar 

  3. M. Robbins and M. A. Miksovsky, Mater. Res. Bull. 6, 359 (1971).

    Article  Google Scholar 

  4. C. Paorici, L. Zanotti, N. Romeo, G. Sberveglieri, and L. Tarricone, Mater. Res. Bull. 12, 1207 (1977).

    Article  Google Scholar 

  5. A. Usujima, S. Takeuchi, S. Endo, and T. Trie, Jpn. J. Appl. Phys. 20, 505 (1981).

    Article  Google Scholar 

  6. N. A. Goryunova, Chemistry of Diamond-like Semiconductors (Leningrad State Univ. Press, Leningrad, 1963).

    Google Scholar 

  7. F. P. Kesamanly and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 27, 1761 (1993) [Semiconductors 27, 969 (1993)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Belorussian State University of Information Science and Radio Electronics, 220069, Minsk, Belarus

    I. V. Bodnar’ & E. A. Kudritskaya

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    I. K. Polushina, V. Yu. Rud’ & Yu. V. Rud’

Authors
  1. I. V. Bodnar’
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. A. Kudritskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. K. Polushina
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. Yu. Rud’
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yu. V. Rud’
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tekh. Poluprovodn. 32, 1043–1046 (September 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bodnar’, I.V., Kudritskaya, E.A., Polushina, I.K. et al. Physical properties of CuxAg1−x In5S8 single crystals and related surface-barrier structures. Semiconductors 32, 933–936 (1998). https://doi.org/10.1134/1.1187539

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187539

Keywords

Search

Navigation