Abstract
The effect of processing heterostructures with GaAs/InGaAs quantum wells in the hydrogen plasma of an rf glow discharge on the photoluminescence spectrum and capacitive photovoltage of these structures is investigated. It is shown that strained quantum-well heterolayers hinder the diffusion of hydrogen and defects into the bulk, which causes the spatial distributions of recombination-active and passivated hydrogenic defect-like complexes in heterostructures, and the processes that create them, to differ appreciably from the same processes in uniform layers.
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Fiz. Tekh. Poluprovodn. 32, 1089–1093 (September 1998)
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Karpovich, I.A., Anshon, A.V. & Filatov, D.O. Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma. Semiconductors 32, 975–979 (1998). https://doi.org/10.1134/1.1187528
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DOI: https://doi.org/10.1134/1.1187528