Abstract
A sudden rise of far-infrared emission against the background saturation of the current-voltage characteristic of a strained InGaAs/AlGaAs structure in a strong electric field was observed in fields of about 1.5 kV/cm. As the electric field increases further, the intensity of the radiation changes nonmonotonically. It is suggested that the rise of emission is due to the formation of domains, which are responsible for the current saturation.
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Fiz. Tekh. Poluprovodn. 32, 1119–1121 (September 1998)
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Ivánov, Y.L., Morozov, S.A., Ustinov, V.M. et al. Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure. Semiconductors 32, 1001–1002 (1998). https://doi.org/10.1134/1.1187533
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DOI: https://doi.org/10.1134/1.1187533