Abstract
The weak-field magnetoresistance of the two-dimensional electron gas (2DEG) in a modulation-doped In0.53Ga0.47As/InP heterostructure is studied as the state of the system is converted to a state with persistent photoconductivity by illuminating the sample with interband light. The concentration dependences of the parameters that characterize the phase (H ϕ) and spin (H s coherence are investigated, both in the low-concentration regime where only the first quantum-well subband is occupied by carriers, and in the regime where the second subband is occupied. A qualitative description of all the features observed in experiment is obtained by taking into account the redistribution of charge in the persistent photoconductivity state and the importance of processes that take place in the second quantum-well subband even when its occupation is small.
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Fiz. Tekh. Poluprovodn. 32, 1100–1107 (September 1998)
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Bykanov, D.D., Kreshchuk, A.M., Novikov, S.V. et al. Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime. Semiconductors 32, 985–991 (1998). https://doi.org/10.1134/1.1187530
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DOI: https://doi.org/10.1134/1.1187530