Abstract
Investigation of the tunneling conductivity σ d(V) of structures made on a highly doped, narrow-gap p-type semiconductor HgCdTe reveals an abrupt increase in this quantity at voltages corresponding to the start of tunneling into the conduction band. It is shown that the observed functions σ d(V) cannot be described in the framework of a model based on single-particle tunneling. It is proposed that the abrupt increase in σ d(V) is attributable to tunneling into exciton states.
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Fiz. Tekh. Poluprovodn. 32, 1069–1072 (September 1998)
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Min’kov, G.M., Germanenko, A.V. & Rut, O.É. Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures. Semiconductors 32, 957–959 (1998). https://doi.org/10.1134/1.1187523
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DOI: https://doi.org/10.1134/1.1187523