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Effect of the quantum-dot surface density in the active region on injection-laser characteristics

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Abstract

A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based on quantum-dot arrays with different surface density is made. It is shown that the use of quantum-dot arrays of higher density makes it possible to decrease substantially the threshold current density in the region of large losses and to increase the maximum gain and the maximum output radiation power.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul’nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop’ev & Zh. I. Alferov

  2. Institut für Festkörperphysik, Technische Universität Berlin, D-10623, Berlin, Germany

    D. Bimberg

Authors
  1. A. R. Kovsh
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  2. A. E. Zhukov
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  3. A. Yu. Egorov
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  4. V. M. Ustinov
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  5. Yu. M. Shernyakov
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  6. M. V. Maksimov
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  7. A. F. Tsatsul’nikov
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  8. B. V. Volovik
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  9. A. V. Lunev
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  10. N. N. Ledentsov
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  11. P. S. Kop’ev
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  12. Zh. I. Alferov
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  13. D. Bimberg
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Additional information

Fiz. Tekh. Poluprovodn. 32, 1114–1118 (September 1998)

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Kovsh, A.R., Zhukov, A.E., Egorov, A.Y. et al. Effect of the quantum-dot surface density in the active region on injection-laser characteristics. Semiconductors 32, 997–1000 (1998). https://doi.org/10.1134/1.1187532

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  • DOI: https://doi.org/10.1134/1.1187532

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