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Determining surface recombination rates in epitaxial layers of n-CdxHg1−x Te from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The dependence of the planar magnetoresistance on magnetic field has been measured for epitaxial layers of n-CdxHg1−x (x=0.211, 0.22) at 300 and 77 K. The 77 K measurements were made in electric fields below and above the threshold field for avalanche impact ionization. The measurement results for the planar magnetoresistance and relaxation time of nonequilibrium charge carriers are used to determine surface recombination rates.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Russian Academy of Sciences (Siberian Department), 630090, Novosibirsk, Russia

    P. A. Borodovskii, A. F. Buldygin & V. S. Varavin

Authors
  1. P. A. Borodovskii
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  2. A. F. Buldygin
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  3. V. S. Varavin
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Additional information

Fiz. Tekh. Poluprovodn. 32, 1076–1078 (September 1998)

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Borodovskii, P.A., Buldygin, A.F. & Varavin, V.S. Determining surface recombination rates in epitaxial layers of n-CdxHg1−x Te from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers. Semiconductors 32, 963–965 (1998). https://doi.org/10.1134/1.1187525

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  • DOI: https://doi.org/10.1134/1.1187525

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