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Pressure dependence of the dielectric and optical properties of wide-gap semiconductors

  • Electronic and Optical Properties of Semiconductors
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Abstract

The Harrison bond-orbital model is used to derive expressions for the pressure dependence of the static dielectric constant ɛ 0 and rf dielectric constant ε ∞, and also the longitudinal ω LO(0) and transverse ω TO(0) optical frequencies of the wide-gap semiconductors 3C-SiC, BN, AlN, and GaN.

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Authors and Affiliations

  1. A. I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. Yu. Davydov & S. K. Tikhonov

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  1. S. Yu. Davydov
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  2. S. K. Tikhonov
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Fiz. Tekh. Poluprovodn. 32, 1057–1059 (September 1998)

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Davydov, S.Y., Tikhonov, S.K. Pressure dependence of the dielectric and optical properties of wide-gap semiconductors. Semiconductors 32, 947–949 (1998). https://doi.org/10.1134/1.1187520

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  • DOI: https://doi.org/10.1134/1.1187520

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