Volume 743, Issue 1

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December 2002

Symposium L — GaN and Related Alloys

Issue Editors:

Y. Arakawa,
A. Rizzi,
J. S. Speck,
C. M. Wetzel,
E. T. Yu

135 articles in this issue

The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor
Estrada Sarah
Andreas Stonas
Evelyn Hu
OriginalPaper 11 February 2011 Article: 1210
Microstructural Defects in Mg-doped AlGaN Layers Grown by Metalorganic Chemical Vapor Deposition
Hyung Koun Cho
Gye Mo Yang
OriginalPaper 11 February 2011 Article: 1160
Activation of Mg acceptors in GaN:Mg monitored by electron paramagnetic resonance spectroscopy.
D. Matlock
M. E. Zvanut
Alma Wickenden
OriginalPaper 11 February 2011 Article: 1159
Ohmic and Rectifying Contacts to n and p-type GaN Films
H. P. Hall
M. A. Awaah
F. Semendy
OriginalPaper 11 February 2011 Article: 1158
Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures
A. Piotrowska
E. Kaminska
R. Jakiela
OriginalPaper 11 February 2011 Article: 1157
Comparative morphology of AuTiAlTi, AuPdAlTi and AuAlTi ohmic contacts to AlGaN/GaN
M. W. Fay
G. Moldovan
P. D. Brown
OriginalPaper 11 February 2011 Article: 1155
Ti/Al- GaN Reaction Mechanism Forming Low Contact Resistivity
Yoshimichi Fukasawa
Tomonori Nakamura
Tohru Nakamura
OriginalPaper 11 February 2011 Article: 1154
A structural analysis of the Pd/GaN ohmic contact annealing behavior
C. C. Kim
P. Ruterana
J. H. Je
OriginalPaper 11 February 2011 Article: 1151
Transport Studies on Two-subband-populated AlGaN/GaN Heterostructures
D. R. Hang
C. F. Huang
B. Shen
OriginalPaper 11 February 2011 Article: 1147
AlGaN/GaN HFETs for Automotive Applications
Ronald Birkhahn
David Gotthold
Seikoh Yoshida
OriginalPaper 11 February 2011 Article: 1145
Properties of Delta Doped Al_0.25Ga_0.75N and GaN Epitaxial Layers
Jeffrey S. Flynn
Leah G. Wallace
George R. Brandes
OriginalPaper 11 February 2011 Article: 1144
Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS
B. P. Gila
E. Lambers
S. J. Pearton
OriginalPaper 11 February 2011 Article: 1140
Plane-wave pseudopotential study on mechanical and electronic properties for group III-V binary phases
S. Q. Wang
H. Q. Ye
OriginalPaper 11 February 2011 Article: 1138
Spectroscopic Characterization of Ion-Implanted GaN
L. Chen
B. J. Skromme
OriginalPaper 11 February 2011 Article: 1135
High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy
Z-Q. Fang
B. B. Claflin
R. L. Henry
OriginalPaper 11 February 2011 Article: 1133
Dislocation-related deep states induced by irradiation in HVPE n-GaN
A. Castaldini
A. Cavallini
L. Polenta
OriginalPaper 11 February 2011 Article: 1132
Electron Stimulated Desorption of Deuterium from GaN (0001) Surface
Y. Yang
J. Lee
B. D. Thoms
OriginalPaper 11 February 2011 Article: 1130
A Study of the Decomposition of GaN during Annealing over a Wide Range of Temperatures
M. A. Rana
H. W. Choi
F. Watt
OriginalPaper 11 February 2011 Article: 1128
Optical Properties of Controllable Self-Assembled Lateral Nanostructures on InN, InAlN, and AlN Thin Films
Yuri Danylyuk
Dmitri Romanov
Gregory Auner
OriginalPaper 11 February 2011 Article: 1127
Electricaland Optical Properties of InN/Si Heterostructure
K. Mizuo
T. Yamaguchi
Y. Nanishi
OriginalPaper 11 February 2011 Article: 1126
Effect of Pressure on the energy band gaps of In_xGa_1-xN and In_xAl_1-xN
Z. Dridi
B. Bouhafs
P. Ruterana
OriginalPaper 11 February 2011 Article: 1125
A Study of Indium Nitride Films Grown Under Conditions Resulting in Apparent Band-gaps from 0.7 eV to 2.3 eV
K. S. A. Butcher
M. Wintrebert-Fouquet
T. L. Tansley
OriginalPaper 11 February 2011 Article: 1123
Optical Band Gap Measurements of InN Films in the Strong Degeneracy Limit
D. B. Haddad
J. S. Thakur
L. E. Wenger
OriginalPaper 11 February 2011 Article: 1122
Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGaN Films Using Prism-Coupling Techniques Correlated with Spectroscopic Reflection/Transmission Analysis^a
Norman A. Sanford
Lawrence H. Robins
Steven P. DenBaars
OriginalPaper 11 February 2011 Article: 1121
Room-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells
Madalina Furis
Fei Chen
William J. Schaff
OriginalPaper 11 February 2011 Article: 1114
An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In_0.1Ga_0.9N Quantum Wells
Nicholas M. Boyall
Ken Durose
Ian M. Watson
OriginalPaper 11 February 2011 Article: 1113
Simultaneous TEM and Cathodoluminescence Imaging of Non Uniformity in In_0.1Ga_0.9N Quantum Wells
Nicholas M. Boyall
Ken Durose
Ian M. Watson
OriginalPaper 11 February 2011 Article: 1112
Excitons of the Structure in Zinc-Blende In_xGa_1-xN and their Properties
Dimiter Alexandrov
OriginalPaper 11 February 2011 Article: 1111
X-ray Spectroscopic Studies of the Bulk Electronic Structure of InGaN Alloys
Cormac McGuinness
James E. Downes
Theodore D. Moustakas
OriginalPaper 11 February 2011 Article: 1011
Development of a High Lateral Resolution Electron Beam Induced Current Technique for Electrical Characterization of InGaN-Based Quantum Well Light Emitting Diodes
Kristin L. Bunker
Juan Carlos Gonzalez
Phillip E. Russell
OriginalPaper 11 February 2011 Article: 1010
AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer
Z. Y. Fan
J. Li
H. Tang
OriginalPaper 11 February 2011 Article: 911
Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors
Frederick W. Clarke
Fat Duen Ho
S. Karmalkar
OriginalPaper 11 February 2011 Article: 910
Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise
Necmi Biyikli
Orhan Aytur
Ekmel Ozbay
OriginalPaper 11 February 2011 Article: 711
Crack Nucleation in AlGaN/GaN Heterostructures
Peter J. Parbrook
Malcolm A. Whitehead
Robert T. Murray
OriginalPaper 11 February 2011 Article: 710
Surface acoustic wave resonator from thick MOVPE-grown layers of GaN(0001) on sapphire
Sverre V. Pettersen
Thomas Tybell
Jostein K. Grepstad
OriginalPaper 11 February 2011 Article: 637
Properties of Surface Acoustic Waves in AlN And GaN
Jianyu Deng
Daumantas Ciplys
Remis Gaska
OriginalPaper 11 February 2011 Article: 636
Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes
A. V. Sampath
A. Bhattacharyya
T. D. Moustakas
OriginalPaper 11 February 2011 Article: 634
Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices
Tohru Honda
Kenichi Iga
Fumio Koyama
OriginalPaper 11 February 2011 Article: 631
Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates
X. Hu
R. Gaska
L. J. Schowalter
OriginalPaper 11 February 2011 Article: 630
Efficient GaN-based Micro-LED Arrays
H. W. Choi
C. W. Jeon
R. W. Martin
OriginalPaper 11 February 2011 Article: 628
Effect of Thickness Variation in High-Efficiency Ingan/Gan Light Emitting Diodes
J. Narayan
H. Wang
John C. C. Fan
OriginalPaper 11 February 2011 Article: 622
The Properties of a P-Implanted GaN Light-Emitting Diode
J. Kikawa
S. Yoshida
Y. Itoh
OriginalPaper 11 February 2011 Article: 620
Lattice Location and Cathodoluminescence Studies of Ytterbium/Thulium Implanted 2H-Aluminium Nitride
U. Vetter
M. F. Reid
M. Dietrich
OriginalPaper 11 February 2011 Article: 616
Electron Microprobe and Photoluminescence Analysis of Europium-Doped Gallium Nitride Light Emitters
R. W. Martin
S. Dalmasso
A. Yoshida
OriginalPaper 11 February 2011 Article: 615
X-Ray Diffraction Analysis of GaN and AlGaN
H. Kang
N. Spencer
B. Peres
OriginalPaper 11 February 2011 Article: 612
Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device
S. Yamaguchi
Y. Iwamura
A. Yamamoto
OriginalPaper 11 February 2011 Article: 611
Optical Characterization of High Quality GaN Produced by High Rate Magnetron Sputter Epitaxy
Minseo Park
E. Carlson
R. J. Nemanich
OriginalPaper 11 February 2011 Article: 412
Growth of Thick InN by Molecular Beam Epitaxy
Hai Lu
William J. Schaff
Richard J. Molnar
OriginalPaper 11 February 2011 Article: 410
Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy
A. H. Onstine
B. P. Gila
S. J. Pearton
OriginalPaper 11 February 2011 Article: 360
Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures
S. Shokhovets
R. Goldhahn
M. Eickhoff
OriginalPaper 11 February 2011 Article: 357

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