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Electron Stimulated Desorption of Deuterium from GaN (0001) Surface

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Abstract

Temperature programmed desorption (TPD) was performed on deuterated GaN(0001) surfaces which had been exposed to various doses of 90-eV electrons. TPD of the deuterated surface without electron exposure shows a broad D2 desorption feature with a peak desorption temperature at ∼400 °C. Electron exposure results in a decrease in intensity of the desorption peak which is attributed to removal of surface deuterium by electron stimulated desorption (ESD). This removal of deuterium by ESD produces no change in the peak desorption temperature indicating that recombinative desorption is first order in deuterium coverage.

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References

  1. R. F. Davis, Proc. IEEE 79, 702 (1991).

    Article  CAS  Google Scholar 

  2. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).

    Article  CAS  Google Scholar 

  3. S. N. Mohammad, A. Salvador, and H. Morkoc, Proc. IEEE 83, 1306 (1995).

    Article  CAS  Google Scholar 

  4. Z. Yu, S. L. Buczkowiski, N. C. Gilies, T. H. Myers and M. R. Richards-Babb, Appl. Phys. Lett. 69, 2371 (1996).

    Google Scholar 

  5. Y. Okamoto,S. Hashiguchi, Y. Okada and M. Kawabe, Jpn. J. Appl. Phys., 38, L230 (1990).

    Article  Google Scholar 

  6. D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson and R. J. Gorman, Appl. Phys. Lett. 73, 2018 (1996).

    Article  Google Scholar 

  7. J. Han, T.-B. Ng, R. M. Biefeld, M. H. Crawford and D. M. Follstaedt, Appl. Phys. Lett. 71, 3114 (1997).

    Article  CAS  Google Scholar 

  8. E. L. Piner, M. K. Behbehani, N. A. El-Masry, J. C. Roberts, F. G. McIntosh and S. M. Bedair, Appl. Phys Lett. 71, 2023 (1997).

    Article  CAS  Google Scholar 

  9. Randy J. Shul in Processing of Wide Band Gap Semiconductors, 263, edited by S. J. Pearton and J. W. Lee (Noyes Publications, New York, 2000), p.263.

  10. S. J. Pearton, C. R. Abernathy, F. Ren, J. R. Lothian, P. Wisk, A. Katz and C. Constantine, Semicond. Sci. Technol. 8, 310 (1993).

    Article  CAS  Google Scholar 

  11. S. J. Pearton and J. W. Lee, in Semiconductors and Semimetals, Vol. 61, edited by N. H. Nickel, (Academic Press, San Diego, 1999), p. 471.

    Google Scholar 

  12. S. Nakamura, N. Twasa, M. Senoh and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992).

    Article  CAS  Google Scholar 

  13. T. D. Moustaks and R. Molnar, Mater. Res, Soc. Symp. Proc. 281, 753 (1993).

    Article  Google Scholar 

  14. S. Nakamura, T. Mukai, M. Senoh and N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992).

    Article  CAS  Google Scholar 

  15. W. Götz, N. M. Johnson, D. P. Bour, M. D. McCluskey and E. E. Haller, Appl. Phys. Lett. 69, 3725 (1996).

    Article  Google Scholar 

  16. B. Clerjaud, D. Côte, A. Lebkiri, C. Naud, J. M. Baranowski, K. Pakula, D. Wasik and T. Suski , Phys. Rev. B 61, 8238-8241 (2000).

    Article  CAS  Google Scholar 

  17. Y. Okamato, M. Saito and A. Oshiyama, Jpn. J. Appl. Phys., 35, L807 (1996).

    Article  Google Scholar 

  18. J. Neugerbauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).

    Article  Google Scholar 

  19. S. Limpijumnong, J. E. Northrup and C. G. Van de Walle, Phys. Rev. Lett., 87, 205505 (2001).

    Article  CAS  Google Scholar 

  20. A. F. Wright, J. Appl. Phys., 90, 1164 (2001).

    Article  CAS  Google Scholar 

  21. A. F. Wright, J. Appl. Phys., 90, 6526 (2001).

    Article  CAS  Google Scholar 

  22. C.-M. Chiang, S. M. Gates, A. Bensaoula and J. A. Schultz, Chem. Phys. Lett. 246, 275 (1995).

    Article  CAS  Google Scholar 

  23. R. Shekhar and K. Jensen, Surf. Sci. Lett. 381, L581 (1997).

    Article  CAS  Google Scholar 

  24. M. E. Bartram and J. R. Creighton, MRS Internet J. Nitride Semicond. Res. 4S1, G3.68 (1999).

  25. V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden and R. L. Henry, Surf. Sci. 430, 80 (1999).

    Article  CAS  Google Scholar 

  26. V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden and R. L. Henry, Phys. Rev. B 60, 4816 (1999).

    Article  CAS  Google Scholar 

  27. V. J. Bellitto, Y. Yang, B. D. Thoms, D. D. Koleske, A. E. Wickenden, R. L. Henry, Surf. Sci. Lett. 442, L1019 (1999).

    Article  CAS  Google Scholar 

  28. V. J. Bellitto, B. D. Thoms, D. D. Koleske, A. E. Wickenden, R. L. Henry, Phys. Rev. B 60, 4821 (1999).

    Article  CAS  Google Scholar 

  29. Y. Yang, J. Lee, B. D. Thoms, D. D. Koleske and R. Henry, Mater. Res. Soc. Symp. Proc., Vol. 693, I6.48.1.

  30. H. P. Gillis, D. A. Choutov, K. P. Martin, S. J. Pearton, and C. R. Abernathy, J. Electrochem. Soc. 143 (1996) L251.

  31. R. Shul et al., Appl. Phys. Lett. 66 (1995) 1761.

  32. A. T. Ping and I. Adesida, Appl. Phys. Lett. 67 (1995) 1250.

  33. S. J. Pearton, Mat. Sci. and Engineering. B 44(1997) 1, and references therein.

  34. R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Phys. Rev. Lett. 65 (1990) 1917.

  35. J. J. Boland, Surf. Sci. 261 (1992) 17.

  36. J. W. Lyding, T. -C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln, Appl. Phys. Lett. 64 (1994) 15.

  37. N. Kramer, H. Birk, J. Jorritsma, and C. Schönenberger, Appl. Phys. Lett. 66 (1995) 1325.

  38. T. Mitsui, E. Hill, and E. Ganz, J. Appl. Phys. 85 (1999) 522.

  39. V. M. Bermudez, D. D. Koleske, and A. E. Wickenden, Appl. Surf. Sci. 126, 69 (1998).

    Article  CAS  Google Scholar 

  40. A. E. Wickenden, D. K. Gaskill, D. D. Koleske, K. Doverspike, S. D. Simons, and P. H. Chi, Res. Mat. Soc. Symp. Proc. 395, 679 (1996).

  41. J.-L. Lin and J. T. Yates, Jr., J. Vac. Sci. Technol. A, 12(5), 2795 (1994).

  42. P. A. Redhead, Can. J. Phys. 42, 886 (1964).

    Article  CAS  Google Scholar 

  43. V. M. Bermudez, J. Appl. Phys. 80, 1190 (1996).

    Article  CAS  Google Scholar 

  44. C. G. Olson, D. W. Lynch, and A. Zehe, Phys. Rev. B 24, 4629 (1981).

    Article  CAS  Google Scholar 

  45. A. Berger, D. Troost, and W. Mönch, Vacuum 41, 671 (1990).

    Article  Google Scholar 

  46. D. Troost, H.-U. Baier, A. Berger, and W. Mönch, Surf. Sci. 242, 324 (1991).

    Article  CAS  Google Scholar 

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  1. Y. Yang

    Present address: University of California, Santa Barbara, CA, USA

Authors and Affiliations

  1. Georgia State University, Atlanta, GA, USA

    Y. Yang, J. Lee & B. D. Thoms

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  1. Y. Yang
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  2. J. Lee
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Yang, Y., Lee, J. & Thoms, B.D. Electron Stimulated Desorption of Deuterium from GaN (0001) Surface. MRS Online Proceedings Library 743, 1130 (2002). https://doi.org/10.1557/PROC-743-L11.30

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