Abstract
We have studied thermal stability of Nb and NbN contacts to GaAs and GaN by x-ray diffraction and SIMS, and demonstrated their excellent behaviour under high temperature annealing. GaAs/Nb and GaAs/NbN contacts are stable up to 800°C and 900°C, respectively while GaN/NbN and GaN/Nb/NbN remain stable up to 1000°C.
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Piotrowska, A., Kaminska, E., Barcz, A. et al. Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures. MRS Online Proceedings Library 743, 1157 (2002). https://doi.org/10.1557/PROC-743-L11.57
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DOI: https://doi.org/10.1557/PROC-743-L11.57