Abstract
GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.
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Honda, T., Iga, K., Kawanishi, H. et al. Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices. MRS Online Proceedings Library 743, 631 (2002). https://doi.org/10.1557/PROC-743-L6.31
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DOI: https://doi.org/10.1557/PROC-743-L6.31