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Effect of Pressure on the energy band gaps of InxGa1-xN and InxAl1-xN

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Abstract

Using a first-principles method, we study the effect of pressure on the band gap energies of wurtzite InxGa1-xN, and InxAl1-xN. The fundamental band gap energies are direct and increase rapidly with pressure. The pressure coefficients vary in the range of 19.8–24.8 meV/GPa for InxGa1-xN, and 16.7–20.7 meV/GPa for InxAl1-xN; they depend on alloy composition with a strong deviation from linearity. The band gap bowing of the InGaN increases continuously with pressure while those of InAlN strongly decreases at p=14 GPa.

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Authors and Affiliations

  1. LERMAT, FRE 2149-CNRS, ISMRA, 6 Boulevard Marechal Juin, 14050, Caen Cedex, France

    Z. Dridi, B. Bouhafs & P. Ruterana

  2. Modelling and Simulation in Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000, Sidi Bel-Abbes, Algeria

    Z. Dridi & B. Bouhafs

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  1. Z. Dridi
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  2. B. Bouhafs
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  3. P. Ruterana
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Dridi, Z., Bouhafs, B. & Ruterana, P. Effect of Pressure on the energy band gaps of InxGa1-xN and InxAl1-xN. MRS Online Proceedings Library 743, 1125 (2002). https://doi.org/10.1557/PROC-743-L11.25

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  • DOI: https://doi.org/10.1557/PROC-743-L11.25

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