Abstract
Gate current plays an important role in determining the characteristics and limiting performance of GaN-based field effect transistors. In GaN-based HFETs, the gate current limits the gate voltage swing and, hence, the maximum device current. Since the electron transport across the wide band gap barrier layer involves trapping, under certain bias conditions, the gate current leads to the threshold voltage shifts and causes reliability problems. Under reverse bias, the gate leakage in GaN-based HFET dominates the minimum (pinch-off) drain current. Insulating gate HFETs (i.e. Metal Oxide Heterostructure Field Effect Transistors – MOSHFETs) have the gate leakage currents 4 – 6 orders of magnitude lower than HFETs, even at elevated temperatures up to 300 °C. In this paper, we report on the gate current characteristics in these devices at room and elevated temperatures. We propose a semi-empirical model for the current-voltage characteristics in these devices, which is in good agreement with experimental data. Our data also show that both tunneling and temperature activation are important factors in MOSHFETs. These results are important for possible applications of GaN MOSHFETs in high power amplifiers and power switches as well as in non-volatile memory devices and integrated circuits that will operate in a much wider temperature range than conventional silicon and GaAs devices.
Similar content being viewed by others
References
M. Asif Khan, G. Simin, J. Yang, J. Zhang, A. Koudymov, M. S. Shur, R. Gaska, X. Hu, and A. Tarakji, Insulating Gate III-N Heterostructure Field-Effect Transistors for High Power Microwave and Switching Applications, Submitted
M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur, AlGaN/GaN Metal-Oxide-Semiconductor Field Effect Transistor on SiC Substrates, Applied Physics Letters, Vol. 77, No. 9, pp. 1339–1341, 2000
N. Pala, R. Gaska, M. S. Shur, J. Yang and M. A. Khan, Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates, Mat. Res. Soc. Proc, vol. 595, pp. W11.9.1-W11.9.6, T. H. Myers, R. M. Feenstra, M. S. Shur, H. Amano, Editors, MRS, Warrenton, PA, (2000), MRS Internet J. Nitride Semicond. Res. 5S1, W11.9 (2000).
R. Caverly, Distortion in Gallium Nitride Microwave and RF Switch Control Circuits
M. Y. Doghish, F. D. Ho, A Comprehensive Analytical Model for Metal-Insulator-Semiconductor (MIS) Devices, IEEE Transactions on Electron Devices, v. 39, No. 12, p.2771, Dec. 1992
Y.-C. Yeo, Q. Lu, and C. Hu, “Gate Oxide Reliability: Anode Hole Injection Model and its Applications”, Chapter 5 of Selected Topics in Electronics and Systems, vol. 23, Oxide Reliability- A Summary of Silicon Oxide Wearout, Breakdown, and Reliability, Ed. D. J. Dumin, World Scientific, pp. 233–270, 2002. ISBN 981-02-4842-3
E. J. Miller, X. Z. Dang and E. T. Yu, Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors, JOURNAL OF APPLIED PHYSICS VOLUME 88, NUMBER 10, NOVEMBER 15, 2000
Shreepad Karmalkar, D. Mahaveer Sathaiya, M. S. Shur, Mechanism of the Reverse Gate Leakage in AlGaN / GaN HEMTs, Submitted to APL
Xie, et al, A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC and RF Performance, IEEE EDL, Vol. 22, No. 7, pp312–314
C.B. Demelo, et al, High Electron Mobility InGaAs-GaAs FET with thermally Oxidized AlAs Gate Insulator, Electronics Letters, Vol. 36, No. 1, pp84–86
Zhifang Fan, S. N. Mohammad, O. Aktas, A. E. Botchkarev, A. Salvador and Hadis Morkoc, Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors, Appl. Phys. Lett. 69 (9), 26 August 1996
S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa and T. Mizutani, “Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors”, Jpn. J. Appl. Phys. vol. 41, Part 1, No. 8, pp. 5125–5126, 2002.
M. S. Shur, A. D. Bykhovski, R. Gaska, and A. Khan, GaN-based Pyroelectronics and Piezoelectronics, in Handbook of Thin Film Devices, Volume 1: Hetero-structures for High Performance Devices, Edited by Colin E.C. Wood, Handbook edited by Maurice H. Francombe, Academic Press, San Diego, 299 (2000).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Clarke, F.W., Ho, F.D., Asif Khan, M. et al. Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors. MRS Online Proceedings Library 743, 910 (2002). https://doi.org/10.1557/PROC-743-L9.10
Published:
DOI: https://doi.org/10.1557/PROC-743-L9.10