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An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In0.1Ga0.9N Quantum Wells

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Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from In0.1Ga0.9N/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the In0.1Ga0.9N and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

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Authors and Affiliations

  1. Department of Physics, University of Durham, South Road, DH1 3LE, Durham, UK

    Nicholas M. Boyall & Ken Durose

  2. Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, G4 ONW, Glasgow, UK

    Ian M. Watson

Authors
  1. Nicholas M. Boyall
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  2. Ken Durose
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  3. Ian M. Watson
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Boyall, N.M., Durose, K. & Watson, I.M. An In-Situ TEM-Cathodoluminescence Study of Electron Beam Degradation of Luminescence from GaN and In0.1Ga0.9N Quantum Wells. MRS Online Proceedings Library 743, 1113 (2002). https://doi.org/10.1557/PROC-743-L11.13

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  • DOI: https://doi.org/10.1557/PROC-743-L11.13

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