Abstract
Single crystalline InN films were grown on Si substrates by radio-frequency plasma-excited molecular beam epitaxy. Electrical property of InN/Si heterojunction was investigated. We obtained rectifying characteristics in n-InN/p-Si heterostructure for the first time. Forward I-V characteristics were affected by both the buffer layer deposition and the nitridation process. Strong photoluminescence peaks for both single crystalline and polycrystalline InN films grown on the Si substrates were observed at around 0.8 eV, which were smaller than the previous reported PL emission peak of around 1.9 eV.
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V. Y. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova and J. Graul; phys. stat. sol. (b) 229 (2002) R1.
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, J. Schaff, Y. Saito and Y. Nanishi; Appl. Phys. Lett. 80 (2002) 3967.
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima and E. Kurimoto; Appl. Phys. Lett. 81 (2002) 1246.
Y. Saito, N. Teraguchi, A. Suzuki, T. Araki and Y. Nanishi; Jpn. J. Appl. Phys. 40 (2001) L91.
Y. Saito, T. Yamaguchi, H. Kanazawa, K. Kano, T. Araki, Y. Nanishi, N. Teraguchi and A. Suzuki; J. Cryst. Growth 237 (2002) 1017.
H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley and L. F. Eastman; Appl. Phys. Lett. 79 (2001) 1489.
M. Higashiwaki and T. Matsui; Jpn. J. Appl. Phys. 41 (2002) L540.
A. Yamamoto, M. Tsujino, M. Ohkubo and A. Hashimoto; Solar Energy Mater. Solar Cells 35 (1994) 53.
M. Yoshimoto, T. Nakano, T. Yamashita, K. Suzuki and J. Saraie; IPAP conf. Series 1 (2000) 186.
M. Yoshimoto, Y. Yoshiaki and J. Saraie; Extended Abst. of 21st Erectronic Materials Symposium (2002) B2.
T. Yamaguchi, K. Mizuo, Y. Saito, T. Araki, N. Teraguchi, A. Suzuki and Y. Nanishi; Extended Abst. of 21st Erectronic Materials Symposium (2002) C3.
T. Yamaguchi, K.Mizuo, Y. Saito, T. Araki and Y. Nanishi; Int. Symp. Comp. Semicond. in Lausanne. (2002) Mo-P-7.
T. Yodo, H. Yona, H. Ando, D. Nosei and Y. Harada; Appl. Phys. Lett. 80 (2002) 968.
V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul and E. E. Haller; phys. stat. sol. (b) 230 (2002) R4.
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Mizuo, K., Yamaguchi, T., Saito, Y. et al. Electricaland Optical Properties of InN/Si Heterostructure. MRS Online Proceedings Library 743, 1126 (2002). https://doi.org/10.1557/PROC-743-L11.26
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DOI: https://doi.org/10.1557/PROC-743-L11.26