Excitons of the Structure in Zinc-Blende In_xGa_1-xN and their Properties

Abstract

The existence of excitons of the structure in zinc-blende In_xGa_1-xN is reported in this paper. The LCAO electron band structure of zinc-blende In_xGa_1-xN is calculated as function of both the electron wave vector and the electron radius-vector. The observed optical absorption edge in In-rich regions in In_xGa_1-xN is explained on the basis of this electron band structure. The excitons of the structure are found on the basis of the electron band structure of zinc-blende In_xGa_1-xN. The binding energy and the hydrogen like energy levels of these excitons are determined. It is found that these excitons are localized. The observed photoluminescence spectrum in In-rich regions of In_xGa_1-xN is explained by the excitons of the structure. It is found that destroying of these excitons occurs in their interactions with hetero-junction and that the electrons and the holes of exciton origin penetrate in the semiconductor of wider energy band gap. This phenomenon is used for explanation of the observed spectral blue shift of the electroluminescence in the quantum well structures on In_xGa_1-xN.