Thermal expansion and thermal conductivity of In2S3 and CuIn5S8 compounds and (CuIn5S8)1 − x (In2S3) x alloys I. V. Bodnar Electronic Properties of Semiconductors 07 May 2014 Pages: 557 - 561
Pyroelectric properties of the wide-gap semiconductor CdS in the low-temperature region Yu. V. ShaldinS. Matyjasik Electronic Properties of Semiconductors 07 May 2014 Pages: 562 - 569
Negative photoconductivity in films of alloys of II–VI compounds M. A. JafarovE. F. NasirovS. A. Mamedova Electronic Properties of Semiconductors 07 May 2014 Pages: 570 - 576
Influence of bismuth on the optical properties of Ge2Sb2Te5 thin films H. Ph. NguyenS. A. KozyukhinA. B. Pevtsov Electronic Properties of Semiconductors 07 May 2014 Pages: 577 - 583
Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction D. A. ZaitsevR. P. Seisyan Surfaces, Interfaces, and Thin Films 07 May 2014 Pages: 584 - 589
On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength N. V. TkachJu. A. Seti Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 590 - 595
Intersubband optical absorption coefficients and refractive index changes in spherical hydrogenic antidots S. DavatolhaghR. KhordadA. R. Jafari Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 596 - 601
On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition V. V. ZuevS. N. GrigorievV. V. Grigoriev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 602 - 611
Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects E. L. PankratovO. P. Gus’kovaV. M. Vorotyntsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 612 - 616
Heat capacity of hexagonal boron nitride sheet in Holstein model Hamze Mousavi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 617 - 620
Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures R. V. KonakovaA. F. KolomysB. G. Konoplev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 621 - 624
Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions P. A. BelevskiiM. N. VinoslavkiiB. N. Zvonkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 625 - 629
Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium V. M. GrabovE. V. DemidovE. E. Konstantinova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 630 - 635
The Hall conductivity of graphene Hamze MousaviSamad Behroozi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 636 - 639
Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates G. B. GalievE. A. KlimovP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 640 - 648
Semiconductor behavior of nanocrystalline carbon S. K. Brantov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 May 2014 Pages: 649 - 652
Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell M. A. MintairovV. V. EvstropovV. M. Lantratov Physics of Semiconductor Devices 07 May 2014 Pages: 653 - 658
Temperature selectivity of the radiation effect on silicon MOS transistors B. P. Koman Physics of Semiconductor Devices 07 May 2014 Pages: 659 - 665
Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping V. M. LukashinA. B. PashkovskiiA. A. Kapralova Physics of Semiconductor Devices 07 May 2014 Pages: 666 - 674
Modeling the efficiency of multijunction solar cells A. B. SachenkoV. P. KostylyovA. I. Shkrebty Physics of Semiconductor Devices 07 May 2014 Pages: 675 - 682
On the role of metal contacts in solar cells based on titanium dioxide and di-(isothiocyanate)-bis-(2,2′-bipyridyl-4,4′-dicarboxylate)ruthenium(II) A. A. LogunovA. I. MashinI. Yu. Stroganov Physics of Semiconductor Devices 07 May 2014 Pages: 683 - 685
Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions S. O. SlipchenkoA. A. PodoskinI. S. Tarasov Physics of Semiconductor Devices 07 May 2014 Pages: 686 - 690
Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures S. O. SlipchenkoA. A. PodoskinP. S. Kop’ev Physics of Semiconductor Devices 07 May 2014 Pages: 691 - 696
On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range S. O. SlipchenkoA. A. PodoskinV. A. Simakov Physics of Semiconductor Devices 07 May 2014 Pages: 697 - 699