Abstract
Thermal expansion and thermal conductivity are studied in the respective temperature ranges 80–600 and 300–600 K for In2S3 and CuIn5S8 single-crystal compounds and (CuIn5S8)1 − x (In2S3) x alloys grown by planar crystallization of the melt (the vertical Bridgman method). From the data, the thermal-expansion coefficient α L is calculated. The dependences of the thermal-expansion coefficient α L and the thermal conductivity χ on the composition parameter x are constructed. It is established that α L linearly varies with x, whereas χ has a minimum at intermediate values of x.
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Original Russian Text © I.V. Bodnar, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 577–581.
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Bodnar, I.V. Thermal expansion and thermal conductivity of In2S3 and CuIn5S8 compounds and (CuIn5S8)1 − x (In2S3) x alloys. Semiconductors 48, 557–561 (2014). https://doi.org/10.1134/S1063782614050030
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DOI: https://doi.org/10.1134/S1063782614050030