Abstract
The infrared radiation emitted by hot electrons in n-InGaAs/GaAs quantum-well heterostructures subjected to a lateral electric field is investigated under conditions of carrier injection from the current contacts. In structures with double tunneling-coupled wells one of which is δ-doped, a pronounced increase in the intensity of far-infrared radiation upon the onset of carrier injection is observed. At the same time, this effect is lacking in single-quantum-well structures with doped wells or barriers. The observed increase in the radiation intensity is associated with the direct intersubband transitions of electrons which contribute to emission upon the real-space transfer of charge carriers between wells. The intensity of these transitions increases due to compensation of the space charge existing between the wells by the injected holes.
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Original Russian Text © P.A. Belevskii, M.N. Vinoslavkii, V.N. Poroshin, N.V. Baidus, B.N. Zvonkov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 643–647.
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Belevskii, P.A., Vinoslavkii, M.N., Poroshin, V.N. et al. Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions. Semiconductors 48, 625–629 (2014). https://doi.org/10.1134/S1063782614050029
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DOI: https://doi.org/10.1134/S1063782614050029