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Semiconductors

, Volume 48, Issue 5, pp 621–624 | Cite as

Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures

  • R. V. Konakova
  • A. F. Kolomys
  • O. B. OkhrimenkoEmail author
  • V. V. Strelchuk
  • A. M. Svetlichnyi
  • M. N. Grigoriev
  • B. G. Konoplev
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Abstract

The effect of laser radiation on the characteristics of amorphous silicon films on glassy or quartz substrates are studied by Raman spectroscopy. It is established that an increase in the laser-treatment power yields a phase transition from amorphous silicon to nanocrystalline silicon. The variation in the relation between the nanocrystalline and amorphous silicon fractions in the films is described in the context of the critical impact model.

Keywords

Raman Spectrum Laser Treatment Amorphous Silicon Raman Line Transmittance Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • R. V. Konakova
    • 1
  • A. F. Kolomys
    • 1
  • O. B. Okhrimenko
    • 1
    Email author
  • V. V. Strelchuk
    • 1
  • A. M. Svetlichnyi
    • 2
  • M. N. Grigoriev
    • 2
  • B. G. Konoplev
    • 2
  1. 1.Lashkaryov Insitute of Semiconductor PhysicsNational Academy of Sciences of UkraineKyivUkraine
  2. 2.Taganrog Institute of TechnologySouthern Federal UniversityTaganrogRussia

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