Skip to main content
SpringerLink
Log in

Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

  • Physics of Semiconductor Devices
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A new model describing the decrease in the emission efficiency and optical output power of a semiconductor laser above the lasing threshold of the Fabry-Perot mode is suggested. The mechanism of deterioration of the output-power characteristics is described in the suggested model in terms of the achievement of closed-mode threshold conditions. Rate equations are used to analyze how the closed-mode threshold conditions are satisfied in semiconductor lasers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov, Semiconductors 38, 1430 (2004).

    Article  ADS  Google Scholar 

  2. S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, K. S. Borshchev, D. A. Vinokurov, and I. S. Tarasov, Semiconductors 40, 990 (2006).

    Article  ADS  Google Scholar 

  3. G. Erbert, F. Bugge, J. Fricke, P. Ressel, R. Staske, B. Sumpf, H. Wenzel, M. Weyers, and G. Trankle, IEEE J. Sel. Top. Quantum. Electron. 11, 1217 (2005).

    Article  Google Scholar 

  4. A. Pietrzak, P. Crump, H. Wenzel, R. Staske, G. Erbert, and G. Trankle, Semicond. Sci. Technol. 24, 035020 (2009).

    Article  ADS  Google Scholar 

  5. A. Komissarov, M. Maiorov, R. Menna, S. Todorov, J. Connoly, D. Garbuzov, V. Khalfin, and A. Tsekoun, in Proceedings of the Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science Conference (CLEO/QELS) (2001), p. 31.

    Google Scholar 

  6. A. Yu. Leshko, A. V. Lyutetski, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov, Semiconductors 36, 1308 (2002).

    Article  ADS  Google Scholar 

  7. G. I. Ryabtsev, T. V. Bezyazychnaya, M. V. Bogdanovich, V. V. Parastchuk, A. I. Yenzhyieuski, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, M. A. Shchemelev, V. V. Bezotosnyi, K. A. Shore, and S. Banerjee, Appl. Phys. B 90, 471 (2008).

    Article  ADS  Google Scholar 

  8. S. O. Slipchenko, D. A. Vinokurov, A. V. Lyutetski, N. A. Pikhtin, A. L. Stankevich, N. V. Fetisova, A. D. Bondarev, and I. S. Tarasov, Semiconductors 43, 1369 (2009).

    Article  ADS  Google Scholar 

  9. S. O. Slipchenko, I. S. Shashkin, L. S. Vavilova, D. A. Vinokurov, A. V. Lyutetski, N. A. Pikhtin, A. A. Podoskin, A. L. Stankevich, N. V. Fetisova, and I. S. Tarasov, Semiconductors 44, 661 (2010).

    Article  ADS  Google Scholar 

  10. S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, Z. N. Sokolova, A. Yu. Leshko, and I. S. Tarasov, Semiconductors 45, 673 (2011).

    Article  ADS  Google Scholar 

  11. S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, Z. N. Sokolova, A. Yu. Leshko, and I. S. Tarasov, Semiconductors 45, 663 (2011).

    Article  ADS  Google Scholar 

  12. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995).

    Google Scholar 

  13. S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, K. S. Borshchev, D. A. Vinokurov, and I. S. Tarasov, Semiconductors 40, 990 (2006).

    Article  ADS  Google Scholar 

  14. N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Semiconductors 36, 344 (2002).

    Article  ADS  Google Scholar 

  15. S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. L. Stankevich, A. Yu. Leshko, N. A. Pikhtin, V. V. Zabrodskii, and I. S. Tarasov, Semiconductors 45, 1378 (2011).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. O. Slipchenko, A. A. Podoskin, I. S. Shashkin, V. V. Zolotarev, N. A. Pikhtin & I. S. Tarasov

Authors
  1. S. O. Slipchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. A. Podoskin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. S. Shashkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. V. Zolotarev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. N. A. Pikhtin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. I. S. Tarasov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. O. Slipchenko.

Additional information

Original Russian Text © S.O. Slipchenko, A.A. Podoskin, I.S. Shashkin, V.V. Zolotarev, N.A. Pikhtin, I.S. Tarasov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 705–709.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Slipchenko, S.O., Podoskin, A.A., Shashkin, I.S. et al. Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions. Semiconductors 48, 686–690 (2014). https://doi.org/10.1134/S1063782614050212

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782614050212

Keywords

Search

Navigation