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Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The germanium-distribution profile is investigated in a Si/SiO2/Si structure after the implantation of 74Ge into SiO2 dielectric layer, bonding with the Si device layer, and high-temperature annealing. The anomalously high transport and accumulation of 74Ge atoms near the SiO2/Si interface far from the bonded boundary is found. The observed 74Ge distribution is beyond the framework of the existing model of diffusion of Ge in Si and SiO2 after postimplantation annealing. A modified model of diffusion of Ge atoms near the Si/SiO2 interface qualitatively explaining the observed features is proposed.

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Authors and Affiliations

  1. Nizhni-Novgorod State University, n.a. N.I. Lobachevsky, Nizhni Novgorod, 603950, Russia

    E. L. Pankratov

  2. Research Institute for Measuring Systems, n.a. Yu.E. Sedakov, Nizhni Novgorod, 603950, Russia

    O. P. Gus’kova & N. D. Abrosimova

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    M. N. Drozdov

  4. Nizhni-Novgorod State Technical University, n.a. R.E. Alekseev, Nizhni Novgorod, 603950, Russia

    V. M. Vorotyntsev

Authors
  1. E. L. Pankratov
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  2. O. P. Gus’kova
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  3. M. N. Drozdov
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  4. N. D. Abrosimova
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  5. V. M. Vorotyntsev
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Corresponding author

Correspondence to E. L. Pankratov.

Additional information

Original Russian Text © E.L. Pankratov, O.P. Gus’kova, M.N. Drozdov, N.D. Abrosimova, V.M. Vorotyntsev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 631–635.

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Pankratov, E.L., Gus’kova, O.P., Drozdov, M.N. et al. Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects. Semiconductors 48, 612–616 (2014). https://doi.org/10.1134/S1063782614050170

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  • DOI: https://doi.org/10.1134/S1063782614050170

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