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Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

  • Physics of Semiconductor Devices
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Abstract

We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce transverse spatial electron transport and enhance quantum confinement. The transistors yield a doubled output power at a trapezoidal gate length of 0.4–0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz in the continuous mode of operation. The gain exceeds 9.5 dB at a specific output power above 1.6 W/mm and a power-added efficiency of up to 50%. Prospects for the development of such devices are presented.

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Authors and Affiliations

  1. Scientific and Production Corporation “Istok”, Moscow oblast, Fryazino, 141195, Russia

    V. M. Lukashin, A. B. Pashkovskii, V. G. Lapin, E. I. Golant & A. A. Kapralova

  2. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia

    K. S. Zhuravlev & A. I. Toropov

Authors
  1. V. M. Lukashin
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  2. A. B. Pashkovskii
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  3. K. S. Zhuravlev
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  4. A. I. Toropov
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  5. V. G. Lapin
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  6. E. I. Golant
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  7. A. A. Kapralova
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Corresponding author

Correspondence to K. S. Zhuravlev.

Additional information

Original Russian Text © V.M. Lukashin, A.B. Pashkovskii, K.S. Zhuravlev, A.I. Toropov, V.G. Lapin, E.I. Golant, A.A. Kapralova, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 684–692.

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Lukashin, V.M., Pashkovskii, A.B., Zhuravlev, K.S. et al. Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping. Semiconductors 48, 666–674 (2014). https://doi.org/10.1134/S1063782614050121

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  • DOI: https://doi.org/10.1134/S1063782614050121

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