Abstract
Using the technique of the subthreshold currents of metal-oxide-semiconductor (MOS) transistors in the temperature range of 290–450 K, the effect of the temperature conditions of X-ray irradiation on the kinetics of the parameters U th and D it of silicon MOS transistors with a channel length of 2–10 μm is studied. It was shown that, according to the parameters under study, the radiation sensitivity of transistors decreases at irradiation temperatures above 360 K (the temperature of the low-temperature maximum in the spectrum of a thermostimulated depolarization (TSD) transistor) and reaches a maximum near 430 K (corresponding to the high-temperature maximum). The results obtained are interpreted from the standpoint of a model of the existence of two carrier trap types, the redistribution of electrically active Na+, K+, Li+, and H+ ions between them under irradiation, and the effect of the partial neutralization of charges at the interface.
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Original Russian Text © B.P. Koman, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 677–683.
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Koman, B.P. Temperature selectivity of the radiation effect on silicon MOS transistors. Semiconductors 48, 659–665 (2014). https://doi.org/10.1134/S1063782614050091
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DOI: https://doi.org/10.1134/S1063782614050091