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On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The results of a comparative study of the electrical properties of gas-sensitive semiconductor structures grown by the pulsed laser deposition of platinum, platinum ion implantation, and a combined method of platinum implantation and deposition onto an n-6H-SiC substrate are presented. Double-layer structures show a stronger response to hydrogen gas with a more pronounced diode behavior of the currentvoltage characteristics at high temperatures of ∼500°C than single-layer ion-implanted structures. Furthermore, double-layer structures exhibit higher reproducibility of the current-voltage characteristic parameters during thermal cycling in a hydrogen-containing medium than ordinary thin-film structures on SiC substrates. The chemical state of ion-implanted platinum and the structure of thin-film layers after long-term testing are studied under harsh conditions. Possible mechanisms of the effect of platinum on the current flow in the ion-implanted layer and its dependence on the composition of the surrounding gaseous medium are considered.

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, Moscow, 115409, Russia

    V. V. Zuev, R. I. Romanov, V. Yu. Fominski & V. V. Grigoriev

  2. Moscow State University of Technology “STANKIN”, Vadkovskii per. 1, Moscow, 127994, Russia

    S. N. Grigoriev

Authors
  1. V. V. Zuev
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  2. S. N. Grigoriev
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  3. R. I. Romanov
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  4. V. Yu. Fominski
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  5. V. V. Grigoriev
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Corresponding author

Correspondence to V. Yu. Fominski.

Additional information

Original Russian Text © V.V. Zuev, S.N. Grigoriev, R.I. Romanov, V.Yu. Fominski, V.V. Grigoriev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 621–630.

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Zuev, V.V., Grigoriev, S.N., Romanov, R.I. et al. On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition. Semiconductors 48, 602–611 (2014). https://doi.org/10.1134/S106378261405025X

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  • DOI: https://doi.org/10.1134/S106378261405025X

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