Skip to main content
SpringerLink
Log in

On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A theory of the transmission channels and current-voltage characteristics of a double-barrier resonant tunneling structure driven by dc electric and high-frequency electromagnetic fields of arbitrary strength is proposed based on an obtained exact solution to the complete one-dimensional Schrödinger equation. It is shown for the first time that an increase in the electromagnetic-field strength leads (as a result of the formation of nonresonant transmission channels in the nanostructure) to a change in its current-voltage characteristic from a single-humped to double-humped curve not only in the vicinities of the electron-resonance energies but also in the energy ranges corresponding to the superpositions of pairs of field satellite states.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. Gmachl, F. Capasso, D. L. Sivco, and A. Y. Cho, Rep. Progr. Phys. 64, 1533 (2001).

    Article  ADS  Google Scholar 

  2. S. Blaser, L. Diehl, M. Beck, and J. Faist, Physica E 7, 33 (2000).

    Article  ADS  Google Scholar 

  3. L. Gendron, M. Carras, A. Huynh, V. Ortiz, C. Koeniguer, and V. Berger, Appl. Phys. Lett. 85, 2824 (2004).

    Article  ADS  Google Scholar 

  4. F. R. Giorgetta, E. Baumann, M. Graf, Q. Yang, C. Manz, K. Kohler, H. E. Beere, D. A. Ritchie, E. Linfield, A. G. Davies, Y. Fedoryshyn, H. Jackel, M. Fisher, J. Faist, and D. Hofstetter, J. Quantum. Electron. 45, 1039 (2009).

    Article  ADS  Google Scholar 

  5. A. B. Pashkovskii, JETP Lett. 82, 210 (2005).

    Article  ADS  Google Scholar 

  6. V. F. Elesin, J. Exp. Theor. Phys. 100, 116 (2005).

    Article  ADS  Google Scholar 

  7. V. F. Elesin, I. Yu. Kateev, and M. A. Remnev, Semiconductors 43, 257 (2009).

    Article  ADS  Google Scholar 

  8. N. V. Tkach, Yu. A. Seti, V. A. Matiek, and I. V. Boiko, Semiconductors 46, 1304 (2012).

    Article  ADS  Google Scholar 

  9. V. F. Elesin and Yu. V. Kopaev, J. Exp. Theor. Phys. 96, 1149 (2003).

    Article  ADS  Google Scholar 

  10. V. F. Elesin, J. Exp. Theor. Phys. 97, 343 (2003).

    Article  ADS  Google Scholar 

  11. E. I. Golant and A. B. Pashkovskii, Semiconductors 34, 327 (2000).

    Article  ADS  Google Scholar 

  12. A. B. Pashkovskii, JETP Lett. 93, 559 (2011).

    Article  ADS  Google Scholar 

  13. N. V. Tkach and Yu. A. Seti, JETP Lett. 95, 271 (2012).

    Article  ADS  Google Scholar 

  14. V. F. Elesin, Yu. V. Kopaev, L. A. Openov, and A. I. Podlivaev, Semiconductors 28, 755 (1994).

    ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Chernivtsi National University, Chernivtsi, 58012, Ukraine

    N. V. Tkach & Ju. A. Seti

Authors
  1. N. V. Tkach
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Ju. A. Seti
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. V. Tkach.

Additional information

Original Russian Text © N.V. Tkach, Ju.A. Seti, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 5, pp. 610–615.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Tkach, N.V., Seti, J.A. On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength. Semiconductors 48, 590–595 (2014). https://doi.org/10.1134/S1063782614050236

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782614050236

Keywords

Search

Navigation