Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals A. F. Revinskii Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 917 - 920
Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon O. V. AleksandrovA. O. Zakhar’inE. O. Parshin Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 921 - 923
Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride S. V. OrdinB. N. SharupinM. I. Fedorov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 924 - 932
Physical properties of CuxAg1−x In5S8 single crystals and related surface-barrier structures I. V. Bodnar’E. A. KudritskayaYu. V. Rud’ Electronic and Optical Properties of Semiconductors Pages: 933 - 936
Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium A. N. VeisS. A. Nemov Electronic and Optical Properties of Semiconductors Pages: 937 - 938
Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment V. B. NeimashV. M. SiratskiiE. A. Puzenko Electronic and Optical Properties of Semiconductors Pages: 939 - 943
The effect of antisite defects on the band structure and dielectric function of In1−x GaxSb solid solutions V. G. DeibukV. I. Studenets Electronic and Optical Properties of Semiconductors Pages: 944 - 946
Pressure dependence of the dielectric and optical properties of wide-gap semiconductors S. Yu. DavydovS. K. Tikhonov Electronic and Optical Properties of Semiconductors Pages: 947 - 949
Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy V. G. MokerovYu. V. FedorovN. G. Yaremenko Electronic and Optical Properties of Semiconductors Pages: 950 - 952
Mobility of charge carriers in double-layer PbTe/PbS structures O. A. AleksandrovaR. Ts. BondokovYu. M. Tairov Electronic and Optical Properties of Semiconductors Pages: 953 - 956
Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures G. M. Min’kovA. V. GermanenkoO. É. Rut Semiconductor Structures, Interfaces, and Surfaces Pages: 957 - 959
Current transport in porous p-Si and Pd-porous Si structures S. V. SlobodchikovKh. M. SalikhovE. V. Russu Semiconductor Structures, Interfaces, and Surfaces Pages: 960 - 962
Determining surface recombination rates in epitaxial layers of n-CdxHg1−x Te from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers P. A. BorodovskiiA. F. BuldyginV. S. Varavin Semiconductor Structures, Interfaces, and Surfaces Pages: 963 - 965
Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum G. V. GadiyakJ. H. Stathis Semiconductor Structures, Interfaces, and Surfaces Pages: 966 - 969
The effect of a nonmonotonic potential profile on edge magnetic states E. B. GorokhovD. A. RomanovO. A. Tkachenko Low Dimensional Systems Pages: 970 - 974
Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma I. A. KarpovichA. V. AnshonD. O. Filatov Low Dimensional Systems Pages: 975 - 979
Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters S. N. GrinyaevV. A. Chaldyshev Low Dimensional Systems Pages: 980 - 984
Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime D. D. BykanovA. M. KreshchukI. G. Savel’ev Low Dimensional Systems Pages: 985 - 991
Energy spectrum of a nonideal quantum well in an electric field O. L. LazarenkovaA. N. Pikhtin Low Dimensional Systems Pages: 992 - 996
Effect of the quantum-dot surface density in the active region on injection-laser characteristics A. R. KovshA. E. ZhukovD. Bimberg Low Dimensional Systems Pages: 997 - 1000
Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure Yu. L. IvánovS. A. MorozovA. E. Zhukov Low Dimensional Systems Pages: 1001 - 1002
Composition and porosity of multicomponent structures: porous silicon as a three-component system L. V. BelyakovT. L. MakarovaO. M. Sreseli Amorphous, Glassy, and Porous Semiconductors Pages: 1003 - 1005
Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities B. I. ReznikovA. V. Subashiev Physics of Semiconductor Devices Pages: 1006 - 1014
Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors V. V. Vasil’evYu. P. Mashukov Physics of Semiconductor Devices Pages: 1015 - 1018
Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm A. A. PopovV. V. SherstnevYu. P. Yakovlev Physics of Semiconductor Devices Pages: 1019 - 1023
Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator I. V. GrekhovM. I. VekslerA. F. Shulekin Physics of Semiconductor Devices Pages: 1024 - 1026