Quantum dot heterostructures: Fabrication, properties, lasers (Review) N. N. LedentsovV. M. UstinovD. Bimberg OriginalPaper Pages: 343 - 365
Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra V. A. NovikovV. V. Peshev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 366 - 371
Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions V. I. ObodnikovE. G. Tishkovskii Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 372 - 374
Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon Yu. V. GorelkinskiiB. N. MukashevKh. A. Abdullin Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 375 - 381
Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III–V compounds (AlSb, GaSb, InSb, GaAs, InAs) V. M. GlazovO. D. Shchelikov Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 382 - 384
Optical absorption and photosensitivity of CuInxGa1-x Se2 thin film structures Yu. V. Rud’V. Yu. Rud’V. F. Gremenok Electronic and Optical Properties of Semiconductors Pages: 385 - 388
On trapping of minority current carriers in n-type CdxHg1-x Te at low temperatures S. G. Gasan-zadeG. A. Shepel’skii Electronic and Optical Properties of Semiconductors Pages: 389 - 391
Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions G. A. KachurinI. E. TyschenkoK. Leo Electronic and Optical Properties of Semiconductors Pages: 392 - 396
Characteristic features of the defect formation process in Pb1−x SnxSe(x⩽0.06) A. N. VeisN. A. Suvorova Electronic and Optical Properties of Semiconductors Pages: 397 - 400
Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg1−x MnxTe in the spin-glass region E. I. GeorgitséV. I. Ivanov-OmskiiD. I. Tsypishka Electronic and Optical Properties of Semiconductors Pages: 401 - 403
Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field É. M. KazaryanK. A. Mkhoyan Electronic and Optical Properties of Semiconductors Pages: 404 - 405
Recombination of donor nickel excitons in the solid solutions ZnSe1−y Sy:Ni V. I. SokolovaO. V. Dolzhenkov Electronic and Optical Properties of Semiconductors Pages: 406 - 408
Photosensitivity of thin-film structures based on laser-deposited CuIn(TexSe1−x )2 layers I. V. Bodnar’V. F. GremenokYu. V. Rud’ Semiconductors Structures, Interfaces, and Surfaces Pages: 409 - 411
Electric and photoelectric properties of n-GaxIn1−x N/p-Si anisotypic heterojunctions S. E. AleksandrovV. A. ZykovD. M. Krasovitskii Semiconductors Structures, Interfaces, and Surfaces Pages: 412 - 416
Intraband absorption of light in quantum wells induced by electron-electron collisions G. G. ZegryaV. E. Perlin Low-Dimensional Systems Pages: 417 - 422
Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra P. G. EliseevI. V. Akimova Low-Dimensional Systems Pages: 423 - 427
Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function P. G. EliseevI. V. Akimova Low-Dimensional Systems Pages: 428 - 433
Staebler-Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon O. A. GolikovaM. M. KazaninV. Kh. Kudoyarova Amorphous, Glassy and Porous Semiconductors Pages: 434 - 438
Study of optical absorption in thin films of a-As2Se3 by photocapacitance spectroscopy I. A. Vasil’evS. D. Shutov Amorphous, Glassy and Porous Semiconductors Pages: 439 - 442
Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon E. A. SheloninM. V. NaidenkovaI. E. Maronchuk Amorphous, Glassy and Porous Semiconductors Pages: 443 - 445
Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate A. S. Kyuregyan The Physics of Semiconductor Devices Pages: 446 - 451
Amplification of electromagnetic waves at odd harmonics of the cyclotron resonance of heavy holes with negative effective masses in semiconducting diamond V. A. Chuenkov The Physics of Semiconductor Devices Pages: 452 - 455
Yaroslav Evgen’evich Pokrovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) (On his 70th birthday) Personalia Pages: 456 - 456