Skip to main content
SpringerLink
Log in

Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra

  • Atomic Structure and Non-Electronic Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

An attempt has been made to relate the origin of the U band in the DLTS spectrum of neutronirradiated GaAs with the known P2 and P3 defects localized near disordered regions. The shape and temperature position of the P2 and P3 peaks in the DLTS spectra are assumed to vary as a result of the influence of the electric field of these disordered regions on the rate of electron emission from the defect levels. The DLTS spectra for P2 and P3 centers located in regions with internal electric fields have been calculated. A comparison of the total calculated spectrum for P2 and P3 centers with a U band reveals satisfactory agreement with experiment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. M. Martin, E. Estève, P. Langlade, and S. Makram-Ebeid, J. Appl. Phys. 56, 2655 (1984).

    ADS  Google Scholar 

  2. D. Pons and J. C. Bourgoin, J. Phys. C: Solid State Phys. 18, 3839 (1985).

    Article  ADS  Google Scholar 

  3. R. Magno, M. Spencer, J. G. Giessner, and E. R. Weber, in 13th Int’l. Conf. on Defects in Semiconductors (Coronado, California, 1984), p. 981.

  4. V. N. Brudnyi, N. G. Kolin, and A. I. Potapov, Fiz. Tekh. Poluprovodn. 27, 260 (1993) [Semiconductors 27, 145 (1993)].

    Google Scholar 

  5. V. N. Brudnyi and V. V. Peshev, Phys. Status Solidi A 105, K57 (1990).

    Google Scholar 

  6. V. A. Ivanyukovich, V. I. Karas’, and V. M. Lomako, Fiz. Tekh. Poluprovodn. 24, 1427 (1990) [Sov. Phys. Semicond. 24, 893 (1990)].

    Google Scholar 

  7. V. N. Brudnyi, S. N. Grinyaev, and V. E. Stepanov, Physica B: Condens. Matter. 212, 429 (1995).

    ADS  Google Scholar 

  8. D. Lang, in Point Defects in Solids [Russian translation] (Mir, Moscow, 1979), p. 187.

    Google Scholar 

  9. R. Coates and E. W. J. Mitchell, Adv. Phys. 24, 593 (1975).

    Article  ADS  Google Scholar 

  10. J. C. Bourgoin and M. Lanoo, Point Defects in Semiconductors (Springer-Verlag, New York, 1980).

    Google Scholar 

  11. L. S. Berman, Capacitance Methods for Studying Semiconductors [in Russian] (Nauka, Leningrad, 1972).

    Google Scholar 

  12. J. L. Hartke, J. Appl. Phys. 39, 4871 (1968).

    Article  Google Scholar 

  13. B. R. Gossick, J. Appl. Phys. 30, 1214 (1959).

    Article  Google Scholar 

  14. D. Stievenard, J. C. Bourgoin, and M. Lanoo, J. Appl. Phys. 55, 1477 (1984).

    Article  ADS  Google Scholar 

  15. C. E. Barnes, T. E. Zipperian, and L. R. Dawson, J. Electron. Mater. 14, 95 (1985).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, 634050, Tomsk, Russia

    V. A. Novikov & V. V. Peshev

Authors
  1. V. A. Novikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Peshev
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tekh. Poluprovodn. 32, 411–416 (April 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Novikov, V.A., Peshev, V.V. Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra. Semiconductors 32, 366–371 (1998). https://doi.org/10.1134/1.1187397

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187397

Keywords

Search

Navigation